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Effect of Interfaces on the Properties of Polycrystalline Thin-Film PZT Ferroelectric Capacitors

Published online by Cambridge University Press:  26 February 2011

Lyuba A. Delimova ,
Igor Grekhov ,
Dmitri Mashovets ,
Ilya Titkov ,
Valentin Afanasjev ,
Petr Afanasjev ,
Galina Kramar  and
Anatolii Petrov
Lyuba A. Delimova
Affiliation:
[email protected], Ioffe Physicotechnical Institute, Russian Academy of Sciences, Solid State Electronics Division, Politekhnicheskaya 26, St.Petersburg, 194021, Russian Federation, +7 (812) 292 7321, +7 (812) 292 7123
Igor Grekhov
Affiliation:
[email protected], Ioffe Physicotechnical Institute, Russian Academy of Sciences, Solid State Electronics Division, Politekhnicheskaya 26, St.Petersburg, 194021, Russian Federation
Dmitri Mashovets
Affiliation:
[email protected] ru, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Solid State Electronics Division, Politekhnicheskaya 26, St.Petersburg, 194021, Russian Federation
Ilya Titkov
Affiliation:
[email protected], Ioffe Physicotechnical Institute, Russian Academy of Sciences, Solid State Electronics Division, Politekhnicheskaya 26, St.Petersburg, 194021, Russian Federation
Valentin Afanasjev
Affiliation:
[email protected], St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Prof. Popov str. 5, St.Petersburg, 197376, Russian Federation
Petr Afanasjev
Affiliation:
[email protected], St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Prof. Popov str. 5, St.Petersburg, 197376, Russian Federation
Galina Kramar
Affiliation:
[email protected], St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Prof. Popov str. 5, St.Petersburg, 197376, Russian Federation
Anatolii Petrov
Affiliation:
[email protected], St.Petersburg Electrotechnical University "LETI", Microelectronics Department, Prof. Popov str. 5, St.Petersburg, 197376, Russian Federation
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Abstract

A photocurrent directed opposite to ferroelectric (FE) polarization is observed in short-circuit thin-film polycrystalline Pt/PZT/Ir structures. The direction and magnitude of photocurrent are defined by the sign and magnitude of the FE polarization. A model based on a photovoltaic effect with characteristics determined by polarization of PZT grains is proposed. The model considers the field interaction of FE polarization charge with the charge carriers in intergranular PbO channel. Thin-film FE capacitor is considered as a photosensitive heterogeneous medium, where the conduction of PbO channels along PZT grain boundaries is controlled by FE polarization.

Keywords

ferroelectricphotovoltaicsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T13-02
Copyright
Copyright © Materials Research Society 2007

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References

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