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The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films

Published online by Cambridge University Press:  25 February 2011

N. R. Manning ,
Haydn Chen ,
J. R. Abelson  and
L. H. Allen
N. R. Manning
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL Materials Research Laboratory, University of Illinois, Urbana, IL
Haydn Chen
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL Materials Research Laboratory, University of Illinois, Urbana, IL
J. R. Abelson
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801.
L. H. Allen
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801.
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Abstract

Samples of crystalline (111) silicon were coated with various thicknesses of hydrogenated amorphous silicon (a-Si:H), then coated with 100 nm of palladium. These samples were then reacted to form Pd2Si in vacuum. The activation energies and reaction prefactors were determined by monitoring the film thickness using x-ray diffraction and by 4-point resistivity measurements. The crystallographic texture of the metal overlayer and suicide films were investigated before and after the reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 617
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Murarka, S.P., Suicides for VLSI Applications, Academic Press, Inc., Orlando FL, 1983), p. 3.Google Scholar
[2] Comrie, C.M. and Egan, J.M., J. Vac. Sci. Technol. A 2(3), 1492 (1989).Google Scholar
[3] Ottaviani, G., J. Vac. Sci. Technol. 16(5), 1112 (1979).Google Scholar
[4] Coulman, Betty and Chen, Haydn, J. Appl. Phys. 52(10), 3467 (1986).CrossRefGoogle Scholar
[5] Little, T. W. and Chen, Haydn, J. Appl. Phys. 63(4), 1182 (1988).Google Scholar
[6] Tsai, C.C., Thompson, M.J., Nemanich, R.J., Jackson, W.B., and Stafford, B.L., J. Vac. Sci. Technol. A 1(2), 785 (1983).CrossRefGoogle Scholar
[7] Pinarbasi, M., Maley, N., Myers, A. and Abelson, J.R., Thin Solid Films 171, 217 (1989).CrossRefGoogle Scholar
[8] Pinarbasi, M., Maley, N., Myers, A., Szafranek, I., Abelson, J.R., and Thornton, J.A. in Amorphous Silicon Technology, edited by Madan, A., Thompson, M. J., Taylor, P.C., LeComber, P.G. and Hamakawa, Y. (Mat. Res. Soc. Proc. 118, 1988) pp. 537–542.Google Scholar
[9] Nylund, A., Acta Chem. Scand. 20, 2381 (1966).CrossRefGoogle Scholar
[10] Hung, L.S., Kennedy, E.F., Palmstrøm, C.J., Olowolafe, J.O., Mayer, J.W. and Rhodes, H, Appl. Phys. Lett. 42(3), 236 (1985).Google Scholar
[11] Hutchins, G.A. and Shepela, A., Thin Solid Films 18 343 (1973).Google Scholar
[12] Bower, R.W., Sigurd, D., and Scott, R.E., Solid State Electron. 16, 1461 (1973).Google Scholar
[13] Fertig, D.J. and Robinson, G.Y., Solid State Electron. 19, 407 (1976).CrossRefGoogle Scholar
[14] Cheung, N, Lau, S.S., Nicolet, M-A., Mayer, J.W., and Sheng, T.T., in Baglin, J.E.E. and Poate, J.M. (eds.), Proc. Symn. on Thin Film Phenomena-Interfaces and Interactions. Vol. 80–2, Electrochemical Society, Princeton, NJ, 1980, p. 494.Google Scholar
[15] Wittmer, M. and Tu, K.N., Phys. Rev. B 22, 1173 (1983).Google Scholar
[16] White, G.E., Ph.D. Thesis, University of Illinois at Urbana-Champaign, 1987.Google Scholar