Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-12-01T02:50:17.193Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Hydrogen Incorporation on the Performance of Nanocrystalline Silicon Thin Film Transistors Fabricated by Microwave ECR Plasma CVD

Published online by Cambridge University Press:  11 February 2011

Lihong Teng  and
Wayne A. Anderson
Lihong Teng
Affiliation:
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14226.
Wayne A. Anderson
Affiliation:
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14226.
Get access

Abstract

Nanocrystalline silicon (nc-Si:H) TFT's with the active layers deposited by microwave ECR-CVD were fabricated and characterized using hydrogen dilution as a variable during the Si film deposition. The bottom-gated TFT's were fabricated on SiO2, glass and polyimide substrates at a temperature of 200–400°C with the introduction of 4–12 mTorr H2. The correlation between the H2 dilution and the TFT characteristics was studied and the experimental results were correlated with some theoretical considerations. The TFT on a glass substrate deposited at 400°C with 10 mTorr H2 showed a field effect mobility of 13.3 cm2/V-s and an ON/OFF current ratio of 4.9×106 with the OFF-state leakage current of 3.7×10−11 A. We found that, for the same Si film deposition conditions, the TFT's fabricated on polyimide foil have comparable characteristics to the TFT's on glass substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.38
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Jenq, F-L, Chen, J-R, Chen, B-Y and Yeh, F-S, Jpn. J. Appl. Phys., Vol. 36 (1997), Part 1, No. 7A, 4246.Google Scholar
2. Meier, J., Fluckiger, R., Keppner, H. and Shah, A., Appl. Phys. Lett., Vol. 65 (1994) 860.Google Scholar
3. Mulato, M., Chen, Y., Wagner, S. and Zanatta, A. R., Journal of Non-Crystalline Solids, 266–269 (2000), 1260.Google Scholar
4. Oshima, T., Yamada, A. and Konagai, M., Jpn. J. Appl. Phys., Part 1, No. 10, Vol. 36 (1997), 6481.10.1143/JJAP.36.6481Google Scholar
5. Tsu, D. V., Chao, B. S., Ovshinsky, S. R., Guha, S. and Yang, J., Appl. Phys. Lett., Vol. 71, No. 10, September 1997, 1319.Google Scholar
6. Platz, R. and Wagner, S., Appl. Phys. Lett., Vol. 73, No. 9, August 1998, 1236.Google Scholar
7. Choi, W-C, Kim, E-K, Min, S-K, Park, C-Y, Kim, J-H and Seong, T-Y, Appl. Phys. Lett., Vol. 70, No. 22, June 1997, 3014.Google Scholar
8. Fonrodona, M., Soler, D., Asensi, J. M., Bertomeu, J. and Andreu, J., Journal of Non-Crystalline Solids, 299–302 (2002), 14.Google Scholar
9. Sun, Y., Miyasato, T. and Wigmore, J. K., Appl. Phys. Lett., Vol. 70, No. 4, January 1997, 508.10.1063/1.118195Google Scholar
10. Jagannathan, B., PhD Dissertation, 1997, State University of New York at Buffalo.Google Scholar
11. Lee, K. H., Jhon, Y. M., Cha, H. J. and Jang, J., IEEE Electron Device Letters, Vol. 17, No. 6, June 1996, 258.Google Scholar