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The Effect of Grain Boundary Chemistry on the Slip Transmission Process Through Grain Boundaries in Ni3Al

Published online by Cambridge University Press:  25 February 2011

I. M. Robertson ,
T. C. Lee ,
Raja Subramanian  and
H. K. Birnbaum
I. M. Robertson
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, 1304 W. Green St., Urbana II 61801.
T. C. Lee
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, 1304 W. Green St., Urbana II 61801.
Raja Subramanian
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, 1304 W. Green St., Urbana II 61801.
H. K. Birnbaum
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, 1304 W. Green St., Urbana II 61801.
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Abstract

The conditions established in disordered FCC systems for predicting the slip system that will be activated by a grain boundary to relieve a local stress concentration have been applied to the ordered FCC alloy Ni3Al. The slip transfer behavior in hypo-stoichiometric Ni3Al with (0.2 at. %B) and without boron was directly observed by performing the deformation experiments in situ in the transmission electron microscope. In the boron-free and boron-doped alloys, lattice dislocations were incorporated in the grain boundary, but did not show evidence of dissociation to grain boundary dislocations or of movement in the grain boundary plane. The stress concentration associated with the dislocation pileup at the grain boundary was relieved by the emission of dislocations from the grain boundary in the boron-doped alloy. The slip system initiated in the adjoining grain obeyed the conditions established for disordered FCC systems. In the boron-free alloy, the primary stress relief mechanism was grain-boundary cracking, although dislocation emission from the grain boundary also occurred and accompanied intergranular crack advance. Because of the importance of the grain boundary chemistry in the models for explaining the boron-induced ductility in hypo-stoichiometric Ni3Al, the chemistry of grain boundaries in well-annealed boron-doped and boron-free alloys was determined by using EDS. No Ni enrichment was found at the grain boundaries examined. These observations are discussed in terms of the different models proposed to explain the ductility improvement in the boron-doped, hypo-stoichiometric alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 357
Copyright
Copyright © Materials Research Society 1992

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