Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-30T20:33:18.495Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Doping on Nanowire Morphology during Plasma-assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  21 May 2012

Andrew J. Lohn ,
Kate J. Norris ,
Robert D. Cormia ,
Elane Coleman ,
Gary S. Tompa  and
Nobuhiko P. Kobayashi
Andrew J. Lohn
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 94040, USA Nanostructured Energy Conversion Technology and Research (NECTAR) of Advanced Studies Laboratories (ASL), University of California Santa Cruz and NASA Ames Research Center, Moffett Field CA, 94035, USA
Kate J. Norris
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 94040, USA Nanostructured Energy Conversion Technology and Research (NECTAR) of Advanced Studies Laboratories (ASL), University of California Santa Cruz and NASA Ames Research Center, Moffett Field CA, 94035, USA
Robert D. Cormia
Affiliation:
Foothill College, Los Altos Hills CA, 94022, USA
Elane Coleman
Affiliation:
Structured Materials Industries Inc, Piscataway NJ, 08854, USA
Gary S. Tompa
Affiliation:
Structured Materials Industries Inc, Piscataway NJ, 08854, USA
Nobuhiko P. Kobayashi
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 94040, USA Nanostructured Energy Conversion Technology and Research (NECTAR) of Advanced Studies Laboratories (ASL), University of California Santa Cruz and NASA Ames Research Center, Moffett Field CA, 94035, USA
Get access

Abstract

Morphologies of silicon nanowires grown by plasma-assisted metalorganic chemical vapor deposition were studied in the presence of various dopant precursors. The varied precursors affected the axial and radial growth rates over orders of magnitude where triethylborane showed the strongest enhancements for both axial and radial growth, and triethylarsenic and triethylantimony retarded axial growth. Native oxide thickness is also shown to depend strongly on doping condition resulting in increased oxide thicknesses for increased carrier concentration, using shifts in the measured binding energy of the silicon 2p3/2 state as a proxy for carrier concentration.

Keywords

dopantnanostructureplasma-enhanced CVD (PECVD) (chemical reaction)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 25 - 31
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Boukai, A.I., Bunimovich, Y., Tahir-Kheli, J., Yu, J.-K., Goddard, A. III, Heath, J.R., Nature 451, 168 (2008).CrossRefGoogle Scholar
Hochbaum, A.I., Chen, R., Delgado, R.D., Liang, W., Garnett, E.C., Najarian, M., Majumdar, A., Yang, P., Nature 451, 163 (2008).CrossRefGoogle Scholar
Kayes, B.M., Atwater, H. A., Lewis, N.S., J. Appl. Phys. 97, 114302 (2005).CrossRefGoogle Scholar
Kobayashi, N.P., Mathai, S., Li, X., Logeeswaran, V.J., Islam, M.S., Lohn, A., Onishi, T., Straznicky, J., Wang, S.-Y., Williams, R.S., Appl. Phys. A 95, 1005 (2009).CrossRefGoogle Scholar
Chuang, L.C., Moewe, M., Chase, C., Kobayashi, N.P., Chang-Hasnain, C., Crankshaw, S., Appl. Phys. Lett. 90, 043115 (2007).CrossRefGoogle Scholar
Li, D., Wu, Y., Kim, P., Shi, L., Yang, P., Majumdar, A., Appl. Phys. Lett. 83, 2934 (2003).CrossRefGoogle Scholar
Meyyappan, M., Sunkara, M.K., Inorganic Nanowires: Applications, Properties, and Characterization CRC Press (2009).CrossRefGoogle Scholar
Yamada, T., Yamada, H., Lohn, A.J., Kobayashi, N.P., Nanotechnology. 22, 055201 (2011).CrossRefGoogle Scholar
Pan, H., Feng, Y.P., ACS Nano. 2, 2410 (2008).CrossRefGoogle Scholar
Weng, X., Burke, R.A., Dickey, E.C., Redwing, J.M., J. Crys. Growth. 312, 514 (2010).CrossRefGoogle Scholar
Hannon, J.B., Kodambaka, S., Ross, F.M., Tromp, R.M., Nature 440, 69 (2006).CrossRefGoogle Scholar
Mehta, B., Tao, M., “A Kinetic Model for Boron and Phosphorus Doping in Silicon Epitaxy by CVD", Journal of The Electrochemical Society 152, G309–G315 (2005).CrossRefGoogle Scholar
Kao, D.-B., McVittie, J.P., Nix, W.D., Saraswat, K.C., “Two-dimensional thermal oxidation of silicon – I. Experiments", IEEE Transactions on Electron Devices 34, 1008–1017 (1987).Google Scholar
Buttner, C.C., Zacharias, M., “Retarded oxidation of Si nanowires", Applied Physics Letters 89, 263106 (2006).CrossRefGoogle Scholar
Ho, C.P., Plummer, J.D., “Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels" Journal of the Electrochemical Society 126, 1523 (1979).CrossRefGoogle Scholar
Colby, J.W., Katz, L.E., “Boron Segregation at Si-SiO2 Interface as a Function of Temperature and Orientation" Journal of the Electrochemical Society 123, 409–412 (1976).CrossRefGoogle Scholar