Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T14:18:28.795Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

Hualiang Shi ,
Junjing Bao ,
Junjun liu ,
Huai Huang ,
Paul S. Ho ,
Michael D Goodner ,
Mansour Moinpour  and
Grant M Kloster
Hualiang Shi
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, PRC, Bldg. 160,, 10100 Burnet Road, Austin, TX, 78758, United States, 512-471-8966, 512-471-8969
Junjing Bao
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center,, PRC, Bldg. 160, 10100 Burnet Road, Austin, TX, 78758, United States
Junjun liu
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC, Bldg. 160, 10100 Burnet Road,, Austin, TX, 78758, United States
Huai Huang
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC, Bldg. 160, 10100 Burnet Road,, Austin, TX, 78758, United States
Paul S. Ho
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC, Bldg. 160, 10100 Burnet Road,, Austin, TX, 78758, United States
Michael D Goodner
Affiliation:
[email protected], Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Mansour Moinpour
Affiliation:
[email protected], Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Grant M Kloster
Affiliation:
[email protected], Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Get access

Abstract

During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.

Keywords

dielectricx-ray photoelectron spectroscopy (XPS)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B03-12
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1ITRS Roadmap 2006, Interconnect, http://www.itrs.net Google Scholar
2 Morgen, M., Ryan, E. T., Zhao, J., Hu, C., Cho, T., and Ho, P. S., Annu. Rev. Mater. Sci., Vol. 30, 645–680 (2000).Google Scholar
3 Maex, K., Baklanov, M. R., Shamiryan, D., Lacopi, F., Brongersma, S. H., and Yanovitskaya, Z. S., Journal of Applied Physics, Vol. 93, 8793–8840 (2003).Google Scholar
4 Abell, T., Lee, J., and Moinpour, M., Mater. Res. Soc. Symp. Proc., Vol. 914 (2006).Google Scholar
5 Possémé, N., David, T., Chevolleau, T., and Joubert, O., Electrochemical and Solid-State Letters, 8 (5) G112–G114 (2005).Google Scholar
6 Aimadeddine, M., Arnal, V., Roy, D., Farcy, A., David, T., Chevolleau, T., Possémé, N., Vitiello, J., Chapelon, L.L., Guedj, C., Brechet, Y., Volpi, F., Torres, J., Interconnect Technology Conference, 2006 International.Google Scholar
7 Grill, A. and Neumayer, D. A., J. Appl. Phys., 94, 6697 (2003)Google Scholar
8 Avila, A., Montero, I., Galan, L., Ripalda, J. M., and Levy, R., J. Appl. Phys., Vol. 89, 212–216 (2001).Google Scholar
9 Yamamoto, K., Koga, Y., and Fujiwara, S., Jpn. J. Appl. Phys., Vol. 40, L123–L126 (2001).Google Scholar
10 Shim, C. and Jung, D., Jpn. J. Appl. Phys., Vol. 43, 940–944 (2004).Google Scholar