Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-28T05:23:57.898Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Bottom Electrode System on Ferroelectric Properties of Sputter Deposited PZT Capacitors

Published online by Cambridge University Press:  10 February 2011

Kwon Hong ,
Yong Sik Yu  and
Shang Kyoo Lee
Kwon Hong
Affiliation:
Process Research Dept. 3, Semiconductor Advanced Research Division, Hyundai Electronics Industries, #633, Sinhae-ri, Ganam-myun, Yeoju-kun, Kyoungki-do, 469-880, Korea
Yong Sik Yu
Affiliation:
Process Research Dept. 3, Semiconductor Advanced Research Division, Hyundai Electronics Industries, #633, Sinhae-ri, Ganam-myun, Yeoju-kun, Kyoungki-do, 469-880, Korea
Shang Kyoo Lee
Affiliation:
Process Research Dept. 3, Semiconductor Advanced Research Division, Hyundai Electronics Industries, #633, Sinhae-ri, Ganam-myun, Yeoju-kun, Kyoungki-do, 469-880, Korea
Get access

Abstract

RF magnetron sputter deposited PZT films were prepared on various bottom electrode systems such as Pt/Ti/SiO2/Si, IrO2/SiO2/Si, Pt/IrO2/SiO2/Si and Ir/IrO2/SiO2/Si substrates using the ceramic PZT target with Pb1.1(Zr0.52Ti0.48)O3 composition. In order to obtain single perovskite phase, PZT films were sputter-deposited at room temperature under Ar only plasma condition followed by high temperature annealing under oxygen ambient. Regardless of the bottom electrode system, reasonable ferroelectric properties such as 2Pp, Vc could be obtained by 650°C post annealing. Their values were over 20μ C/cm2 and below ± 1.OV when drive voltage was ± 3V, respectively. Hybrid electrode system, namely, thick Pt or Ir and thin IrO2 shows good leakage current characteristics, of ∼ 10−8A/cm2. Fatigue properties of PZT capacitor depend on the test condition. However, retention after 3×104sec showed a degradation of 15% when writing voltage was −5V irrespective of bottom electrode system. Imprint characteristics also showed good results within ± 1 as a figure of merit (FOM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 107
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Appl. Phys. Lett. 65, p. 1522 (1994).Google Scholar
2. Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Jpn. J. Appl. Phys. 33, p. 5207 (1994).Google Scholar
3. Shimizu, M., Fujisawa, H., Hyodo, S., Nakashima, S., and Hiu, H. in Ferroelectric Thin Films VI, edited by Treece, R.E., Jones, R.E., Foster, C.M., Desu, S.B., and Yoo, I.K. (Mater. Res. Soc. Proc. 493, Boston, MA, 1997) p. 159–164.Google Scholar
4. Hong, K., You, I.K., Yu, Y.S., and Lee, S.K., Integrated Ferroelectrics 21, p. 511 (1998).Google Scholar
5. Sadashivan, S., Aggarwal, S., Song, T.K., Ramesh, R., Evans, J.T., Tuttle, B.A., Warren, W.L., and Dimos, D., J. Appl. Phys. 83, p. 2165 (1998).Google Scholar
6. Kushida-Abdelghafar, K. and Fujisaki, Y., Jpn. J.Appl. Phys. 37, p. L804 (1998).Google Scholar