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Effect of Boron Doping on Microcrystalline Germanium Carbon Thin Films

Published online by Cambridge University Press:  01 February 2011

Yasutoshi YASHIKI ,
Seiichi KOUKETSU ,
Shinsuke MIYAJIMA ,
Akira YAMADA  and
Makoto KONAGAI
Yasutoshi YASHIKI
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1 S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Seiichi KOUKETSU
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, 152-8552, Japan
Shinsuke MIYAJIMA
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, 152-8552, Japan
Akira YAMADA
Affiliation:
[email protected], Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, Tokyo, 152-8552, Japan
Makoto KONAGAI
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, 152-8552, Japan
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Abstract

Effects of boron doping on microcrystalline germanium carbon alloy (μc-Ge1-xCx:H) thin films have been investigated. We deposited boron-doped p-type μc-Ge1-xCx:H thin films by hot-wire chemical vapor deposition technique using hydrogen diluted monomethylgermane (MMG) and diborane (B2H6). A dark conductivity of 1.3 S/cm and carrier concentration of 1.7 x 1020 cm-3 were achieved with B2H6/MMG ratio of 0.1. Furthermore, the activation energy decreased from 0.37 to 0.037 eV with increasing B2H6/MMG ratio from 0 to 0.1. We also fabricated p-type μc-Ge1-xCx:H/n-type c-Si heterojunction diodes. The diodes showed rectifying characteristics. The typical ideality factor and rectifying ratio were 1.4 and 3.7 x 103 at ¡Ó 0.5 V, respectively.

Keywords

Geelectrical propertiesphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A05-04
Copyright
Copyright © Materials Research Society 2007

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References

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