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The Effect of (Ba,Sr) and (Mn,Fe,W) Dopants on the Microwave Properties of BaxSr1−xTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Wontae Chang
Affiliation:
Institute for Materials Science, School of Engineering and Applied ScienceGeorge Washington University725 23rd Street, NW, Washington, D.C. 20052
James S. Horwitz
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Won-Jeong Kim
Affiliation:
SFA Inc., 1401 McCormick Dr., Largo, MD20774
Jeffrey M. Pond
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Steven W. Kirchoefer
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Douglas B. Chrisey
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
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Abstract

Single phase BaxSr1−xTiO3 (x=0.5 and 0.6) thin films (∼5000Å thick) have been deposited onto (100) MgO single crystal substrate with (Ba,Sr) compensated and/or (Mn,Fe,W) doped targets using pulsed laser deposition (PLD). The room temperature capacitance (C) and dielectric Q (1/tanδ) have been measured at microwave frequencies of I to 20 GHz as a function of electric field (0-80kV/cm). Microstructural defects associated with cation and anion vacancies have been observed in BaxSr1−xTiO3 films. Compensation of the ablation target with excess Ba and Sr tends to increase the dielectric constant and the dielectric Q. A film deposited with (Ba,Sr) compensated target has been obtained with 25% tuning, where % tuning is defined as {(C(0)-C(E))/C(O))×100, and dielectric Q of ∼ 100 at room temperature (1 — 10 GHz) for DC bias field (E=67 kV/cm). A further increase in the dielectric Q is observed by the addition of donor/acceptor dopants such as Mn, Fe, and W (Q≈100-240). The effects of (Ba, Sr) compensation and (Mn,Fe,W) doping on the film structure and dielectric properties are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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