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Dual-Gate SiO2/P3HT/SiNx OTFT

Published online by Cambridge University Press:  01 February 2011

Flora Li ,
Sarswati Koul ,
Yuri Vygranenko ,
Peyman Servati  and
Arokia Nathan
Flora Li
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Sarswati Koul
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Yuri Vygranenko
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Peyman Servati
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Arokia Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
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Abstract

This paper reports on a new organic thin-film transistor (OTFT) based on a dual-gate configuration. This dual-gate OTFT is useful in circuit applications from the standpoint of providing control over selected device parameters for enhanced circuit reliability. Moreover, the dual-gate structure can shield parasitic effects in vertically integrated electronics, making it particularly promising for active matrix display and imaging applications. The dual-gate OTFT also lends itself as a highly functional test structure for characterization of interface integrity of the active organic and dielectric layers. In this work, the dual-gate OTFT is fabricated using regioregular poly(3-hexylthiophene) (P3HT) as the organic semiconductor layer. The bottom-gate employs silicon dioxide (SiO2) as the gate dielectric, whereas the top-gate employs a low-temperature amorphous silicon nitride (SiNx) as the passivation dielectric. The voltage on the bottom-gate has a distinct influence on the threshold voltage, subthreshold slope, on-current, and leakage current of the top-gate TFT. Similar dependence of the bottom-gate TFT characteristics on the top-gate voltage is observed. This design provides a means of characterizing the density of states of the bottom P3HT/SiO2 and top P3HT/SiNx interfaces, and conveys insight into the underlying transport mechanisms. The ability to control selected TFT parameters (e.g., threshold voltage) using the dual-gate OTFT structure is attractive for circuit integration applications in active matrix displays and imagers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I9.3
Copyright
Copyright © Materials Research Society 2005

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