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Dry Etch Damage In InN, InGaN and InAIN

Published online by Cambridge University Press:  15 February 2011

S. J. Pearton ,
J. W. Lee ,
J. D. MacKenzie ,
C. B. Vartuli ,
S. M. Donovan ,
C. R Abernathy ,
R. J. Shul ,
F. Ren  and
J. R. Lothian
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611
J. W. Lee
Affiliation:
University of Florida, Gainesville, FL 32611
J. D. MacKenzie
Affiliation:
University of Florida, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Gainesville, FL 32611
S. M. Donovan
Affiliation:
University of Florida, Gainesville, FL 32611
C. R Abernathy
Affiliation:
University of Florida, Gainesville, FL 32611
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
F. Ren
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill NJ 07074
J. R. Lothian
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill NJ 07074
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Abstract

Damage introduction in III-V nitrides during dry etching can be simulated by exposingthe samples to pure Ar plasmas for study of the physical (ion-bombardment) effects.Changes in conductivity of InN, In0.5Ga 0.5N and In0.5Al0.5N layers exposed to Ar plasmasunder both Electron Cyclotron Resonance and reactive ion etching conditions have beenmeasured as a function of rfpower, pressure and exposure time. The combination of highmicrowave and high rf powers produces large increases (10-_104 times) in sheet resistanceof the nitrides, but conditions more typical of real etching processes (rf power < 150W) donot change the bulk electrical properties. The nitrides are more resistant to damageintroduction than other III-V semiconductors. The removal of damage-related trapsoccurs with an activation energy of ∼2.7eV. High ion currents during ECR etching canproduce substantial conductivity changes, whereas the lower currents under RIEconditions do not affect the nitrides. It is difficult to avoid preferential loss of N in thenear-surface of these materials, which leads to leakage currents in rectifying metal contactsdeposited on these surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 163
Copyright
Copyright © Materials Research Society 1996

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