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A DLTS study of a ZnO microwire, a thin film and bulk material

Published online by Cambridge University Press:  27 February 2014

Florian Schmidt ,
Peter Schlupp ,
Stefan Müller ,
Christof Peter Dietrich ,
Holger von Wenckstern ,
Marius Grundmann ,
Robert Heinhold ,
Hyung-Suk Kim  and
Martin Ward Allen
Florian Schmidt
Affiliation:
Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany
Peter Schlupp
Affiliation:
Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany
Stefan Müller
Affiliation:
Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany
Christof Peter Dietrich
Affiliation:
Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany
Holger von Wenckstern
Affiliation:
Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany
Marius Grundmann
Affiliation:
Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany
Robert Heinhold
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch, New Zealand
Hyung-Suk Kim
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch, New Zealand
Martin Ward Allen
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch, New Zealand
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Abstract

We have investigated the electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition on an a-plane sapphire, and a hydrothermally grown Zn-face ZnO single crystal (Tokyo Denpa Co. Ltd.). The samples were investigated by means of current-voltage measurements, capacitance-voltage measurements, and deep-level transient spectroscopy.

The defects T2 [1,2] and E3 [1,3,4] were identified in all three sample types. Additionally, in the single crystal and thin film samples E64 [5] and E4 [1] were detected. These findings support the common opinion that T2 is an intrinsic defect since it is found in all the samples investigated and thus its occurrence is not related to any growth technique.

Keywords

defectsdeep level transient spectroscopy (DLTS)microstructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 51 - 54
Copyright
Copyright © Materials Research Society 2014 

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References

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