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Displacement Current Measurement of MIS Devices with Ionic Liquids to Explore Carrier Behaviors in Model Interfaces of Organic Devices

Published online by Cambridge University Press:  14 January 2011

Taiki Yamada ,
Yutaka Noguchi ,
Yukio Ouchi  and
Hisao Ishii
Taiki Yamada
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
Yutaka Noguchi
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan. Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
Yukio Ouchi
Affiliation:
Department of Chemistry, Graduate School of Science, Nagoya University, Furo-cho, Chikusaku, Nagoya 464-8602, Japan.
Hisao Ishii
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan. Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Abstract

Charge injection property of organic thin film devices is a key issue to understand the device operation. Displacement current measurement (DCM) is a powerful technique to probe the charge injection behaviors in terms of a change in the apparent capacitance of test devices. However, it requires to suppress actual current flowing through the device for investigating the details of interface phenomena. We propose here the use of ionic liquids (ILs) as a top contact insulator in organic metal-insulator-semiconductor (MIS) structures. Because of the high stability and dielectric constant of the ILs, the external applied voltage was applied mainly to the organic layer with suppressing the actual current. The DCM curves of Pt wire/IL/α-NPD/ITO structure were measured, and they actually show the signals due to the hole injection from theITO to α-NPD layer and accumulation at the IL/α-NPD.

Keywords

insulatordeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1286: Symposium E – Molecular and Hybrid Materials for Electronics and Photonics , 2011 , mrsf10-1286-e03-39
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Malliaras, G. and Friend, R., Phys. Today 58(5), 53 (2005).Google Scholar
2. Ogawa, S., Kimura, Y., Ishii, H., Niwano, M., Jpn. J. Appl. Phys. 42, L1275–L1278 (2003)Google Scholar
3. Noguchi, Y., Sato, N., Tanaka, Y., Nakayama, Y., Ishii, H., Appl. Phys. Lett. 92, 203306 (2008)Google Scholar
4. Ono, S., Miwa, K., Seki, S., and Takeya, J., Appl. Phys. Lett 94, 063301 (2009)Google Scholar
5. Seki, S., Kobayashi, Y., Miyashiro, H., Ohno, Y., Usami, A., Mita, Y., Kihira, N., Watanabe, M., and Terada, N., J. Phys. Chem. B 110, 10228 (2006)Google Scholar
6. Armand, M., Endres, F., MacFarlane, D. R., Ohno, H. and Scrosati, B., Nat. Mater. 8, 621 (2009)Google Scholar