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Disordering and Characterization Studies of 69GaAs/71GaAs Isotope Superlattice Structures: The Effect of Outdiffusion of the Substrate Dopant Si

Published online by Cambridge University Press:  03 September 2012

T. Y. Tan ,
H. M. You ,
S. Yu ,
U. M. Gitesele ,
W. Jäger ,
F. Zypman ,
R. Tsu  and
S. -T. Lee
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
H. M. You
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
S. Yu
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
U. M. Gitesele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
W. Jäger
Affiliation:
Institute for Solid State Physics, Research Center D-5170 Julien, Germany
F. Zypman
Affiliation:
Department of Electrical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28213
R. Tsu
Affiliation:
Department of Electrical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28213
S. -T. Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
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Abstract

Undoped 69GaAs/71GaAs isotope superlattice structures grown by MBE on n-type GaAs substrates, doped by Si to ∼3×1018 cm−3, have been used to study Ga self-diffusion in GaAs by disordering reactions. In the temperature range of 850–960°C, the SIMS measured Ga self-diffusivity values showed an activation enthalpy of 4 eV, and are larger than previously compiled Ga self-diffusivity and Al-Ga interdiffusivity values obtained under thermal equilibrium and intrinsic conditions, which are characterized by a 6 eV activation enthalpy. SIMS, CV, and TEM characterizations showed that the as-grown superlattice layers were intrinsic which became p-type with hole concentrations up to ∼2×1017 cm−3 after annealing, because the layers contain carbon. Dislocations of a density of ∼106-107 cm−2 were also present. However, the factor responsible for the presently observed larger Ga self-diffusivity values appears to be Si outdiffusion from the substrate, which was determined using CV measurements. Outdiffusion of Si decreases the n value in the substrate which causes the release of excess Ga vacancies into the superlattice layers where the supersaturated Ga vacancies enhance Ga self-diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 873
Copyright
Copyright © Materials Research Society 1992

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References

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