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Dislocation Arrays in Sapphire using Femtosecond Laser Irradiation

Published online by Cambridge University Press:  31 January 2011

Chiwon Moon ,
Shingo Kanehira ,
Kiyotaka Miura ,
Eita Tochigi ,
Naoya Shibata ,
Yuichi Ikuhara  and
Kazuyuki Hirao
Chiwon Moon
Affiliation:
[email protected], Kyoto University, Material Chemistry, Kyoto, Japan
Shingo Kanehira
Affiliation:
[email protected], Kyoto University, Innovative Collaboration Center, Kyoto, Japan
Kiyotaka Miura
Affiliation:
[email protected], Kyoto University, Material Chemistry, Kyoto, Japan
Eita Tochigi
Affiliation:
[email protected], University of Tokyo, Tokyo, Japan
Naoya Shibata
Affiliation:
[email protected], University of Tokyo, Tokyo, Japan
Yuichi Ikuhara
Affiliation:
[email protected], University of Tokyo, Tokyo, Japan
Kazuyuki Hirao
Affiliation:
[email protected], Kyoto University, Material Chemistry, Kyoto, Japan
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Abstract

We investigated the formation mechanism and thermal behaviors of defects which were induced at a microscopic area inside (1120) sapphire. We used a femtosecond laser having a pulse width, wavelength, and repetition rate of 238 fs, 780 nm, and 1 kHz, respectively. Cracks were formed at the focal point along the {1102} and the {1100} planes by laser irradiation. The preferential crack formation on these planes was attributed to the different surface fracture energy between the crystallographic planes of sapphire. The cracks transformed into the array of discrete pores by the subsequent heat treatment above 1300 °C, which was due to the diffusive crack healing process. In addition, dislocations were also introduced at the interface between closed cracks.

Keywords

laserdefectsnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1228: Symposium KK – Nanoscale Pattern Formation , 2009 , 1228-KK05-56
Copyright
Copyright © Materials Research Society 2010

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