Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T11:00:24.824Z Has data issue: false hasContentIssue false

Diffusional Coating of Nanoparticles

Published online by Cambridge University Press:  11 February 2011

James P. Lavine*
Affiliation:
Digital and Applied Imaging, Image Sensor Solutions, Eastman Kodak Company, Rochester, NY, 14650–2008, U.S.A.
Get access

Abstract

The time-dependent diffusion of particles to an absorbing sphere is investigated with three random walk models. The first uses consecutive independent particles and finds the capture time distributions are exponential for a range of values of the surface absorption probability. The next two models are of the ensemble variety and assume that only a finite number of particles may be absorbed by the sphere. These models investigate depletion effects and concentration dependence. The latter is probed by varying the initial number of diffusing particles. It is found

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Weller, H. and Eychmüller, A., in Semiconductor Nanoclusters – Physical, Chemical, and Catalytic Aspects, edited by Kamat, P.V. and Meisel, D. (Elsevier, Amsterdam, 1997) p. 522.Google Scholar
2. Lee, S.-M., Jun, Y.-w., Cho, S.-N., and Cheon, J., J. Am. Chem. Soc. 124, 11244 (2002).Google Scholar
3. Myers, S. M., Seibt, M., and Schröter, W., J. Appl. Phys. 88, 3795 (2000).Google Scholar
4. Berg, H. C., Random Walks in Biology (Princeton University Press, Princeton, NJ, 1993) Ch. 2.Google Scholar
5. Redner, S., A Guide to First-Passage Processes (Cambridge University Press, Cambridge, (2001) Ch. 6.Google Scholar
6. Press, W. H., Teukolsky, S. A., Vetterling, W. T., and Flannery, B. P., Numerical Recipes in FORTRAN (Cambridge University Press, Cambridge, 1992), 2nd edition, pp. 271280.Google Scholar
7. Anagnostopoulos, C. N., Nelson, E. T., Lavine, J. P., Wong, K. Y., and Nichols, D. N., IEEE Trans. Electron Dev. ED–31, 225 (1984).10.1109/T-ED.1984.21505Google Scholar
8. Ham, F. S., J. Phys. Chem. Solids 6, 335 (1958).Google Scholar