Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T23:15:57.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion of Te or Zn into GaAs from Doped SiO2 Films by Rapid Thermal Processing

Published online by Cambridge University Press:  21 February 2011

A. Kitagawa ,
A. Usami ,
Y. Tokuda ,
T. Wada ,
H. Kan  and
T. Murakami
A. Kitagawa
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Tokuda
Affiliation:
Aichi Institute of Technology, Dept. of Electronics, Yakusa, Toyota 470–03, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Kan
Affiliation:
Hamamatsu Photonics KK, Hamamatsu, Shizuoka 435, Japan
T. Murakami
Affiliation:
Hamamatsu Photonics KK, Hamamatsu, Shizuoka 435, Japan
Get access

Abstract

The n+ layers on semi-insulating liquid encapsulated Czochralski GaAs and p+ layers on Si-doped n-type GaAs were formed by rapid thermal diffusion (RTD) from Te- and Zn-doped oxide films, respectively. The Zn diffusion coefficient of the RTD sample at 850°C for 6s with the heating rate of 50°C/s is about two orders of magnitude higher than that of a similar furnacediffused sample at the same temperature. In addition, Zn and Te diffusion are strongly enhanced by the high heating rate of RTD. The shallow and abrupt p+n junction in GaAs is formed by RTD of Zn with the low heating rate. This shallow p+n junction is suitable for the construction of a photodiode. It is observed that the short wavelength spectral response (<800 nm) of the photodiode fabricated by RTD from Zn-doped oxide film decreases as the heating rate of RTD increases. Deep levels in these photodiodes were characterized by deep level transient spectroscopy. A electron trap EZ (Ec -0.57eV) is produced by RTD of Zn in the n-type substrate under p+n junction. The concentration of this trap is independent of the heating rate of RTD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 65
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tiwari, S., Hintzman, J. and Callegari, A., Appl. Phys. Lett. 51, 2118 (1987).CrossRefGoogle Scholar
2. Usami, A., Tokuda, Y., Shiraki, H., Ueda, H., Wads, T., Kan, H., and Murakami, T., Mat. Res. Soc. Symp. Proc. 92, 393 (1987).Google Scholar
3. Kuzuhara, M. and Kohzu, H., Appl. Phys. Lett. 44, 527 (1984).Google Scholar
4. Kirchner, P. D., Jackson, T. N., Pettit, G. D., and Woodall, J. M., Appl. Phys. Lett. 47, 26 (1985).Google Scholar
5. Nissim, Y. I. and Gibbons, J. F., Appl. Phys. Lett. 37, 89 (1980).CrossRefGoogle Scholar
6. Greiner, M. E. and Gibbons, J. F., Appl. Phys. Lett. 44, 750 (1984).Google Scholar
7. Martin, G. M., Mitonneaw, A., and Mircea, A., Electron. Lett. 13, 191 (1977).Google Scholar