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Diffuse x-ray scattering from InGaAs/GaAs quantum dots

Published online by Cambridge University Press:  01 February 2011

Rolf Köhler ,
Daniil Grigoriev ,
Michael Hanke ,
Martin Schmidbauer ,
Peter Schäfer ,
Stanislav Besedin ,
Udo W. Pohl ,
Roman L. Sellin ,
Dieter Bimberg  and
Nikolai D. Zakharov
...Show all authors
Rolf Köhler
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Daniil Grigoriev
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Michael Hanke
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Martin Schmidbauer
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Peter Schäfer
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Stanislav Besedin
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Udo W. Pohl
Affiliation:
Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, D-10623 Berlin, Germany
Roman L. Sellin
Affiliation:
Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, D-10623 Berlin, Germany
Dieter Bimberg
Affiliation:
Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, D-10623 Berlin, Germany
Nikolai D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
Peter Werner
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
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Abstract

Multi-fold stacks of In0.6Ga0.4As quantum dots embedded into a GaAs matrix were investigated by means of x-ray diffuse scattering. The measurements were done with synchrotron radiation using different diffraction geometries. Data evaluation was based on comparison with simulated distributions of x-ray diffuse scattering. For the samples under consideration ((001) surface) there is no difference in dot extension along [110] and [-110] and no directional ordering. The measurements easily allow the determination of the average indium amount in the wetting layers. Data evaluation by simulation of x-ray diffuse scattering gives an increase of Incontent from the dot bottom to the dot top.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T6.6/N8.6/Z6.6
Copyright
Copyright © Materials Research Society 2004

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References

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