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Deviation from Stoichiometry and Lattice Properties of Semiconducting SnTe Phase

Published online by Cambridge University Press:  26 February 2011

E. I. Rogacheva ,
G. V. Gorne  and
O. N. Nashchekina
E. I. Rogacheva
Affiliation:
Polytechnical University, 21 Frunze St., 310002 Kharkov, Ukraine
G. V. Gorne
Affiliation:
Polytechnical University, 21 Frunze St., 310002 Kharkov, Ukraine
O. N. Nashchekina
Affiliation:
Polytechnical University, 21 Frunze St., 310002 Kharkov, Ukraine
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Abstract

The temperature dependences of lattice thermal conductivity λp in the range of 300-650 K were obtained for SnTe1+x semiconducting phase with x =0-0.04. It is established that the nonstoichiometric vacancies are centers of effective scattering of phonons. The scattering cross-section calculated from experimental data is in a good agreement with the theoretical calculations based on the Klemens theory. The linear change of thermal resistance with temperature is observed, which evidences the prevalence of three-phonon scattering processes. The additional thermal resistance grows as the concentration of cation vacancies increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 107
Copyright
Copyright © Materials Research Society 1995

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