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Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  31 January 2011

Yitao Liao ,
Christos Thomidis ,
Anirban Bhattacharyya ,
Chen-kai Kao ,
Adam Moldawer ,
Wei Zhang  and
Theodore D. Moustakas
Yitao Liao
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Christos Thomidis
Affiliation:
[email protected], United States
Anirban Bhattacharyya
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Chen-kai Kao
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Adam Moldawer
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Wei Zhang
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Theodore D. Moustakas
Affiliation:
[email protected], Boston University, Boston, Massachusetts, United States
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Abstract

In this paper, we report the development of AlGaN-based deep ultraviolet LEDs by rf plasma-assisted molecular beam epitaxy (MBE) emitting between 277 and 300 nm. Some of these devices were evaluated after fabrication at bare-die and some at wafer-level configurations. Devices with total optical output of 1.3 mW at injection current of 200 mA were produced, with maximum external quantum efficiency (EQE) of 0.16%. These performance values are equivalent to those reported for deep UV-LEDs grown by the Metalorganic chemical vapor deposition (MOCVD) method and measured at bare-die configuration. In parallel, we have evaluated the internal quantum efficiency (IQE) of AlGaN quantum wells, and found that such wells emitting at 250 nm have an IQE of 50%. From the analysis of these data, we concluded that the efficiency of deep UV LEDs is not limited by the IQE but by the light extraction efficiency, injection efficiency or a combination of both.

Keywords

molecular beam epitaxy (MBE)nitrideIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I10-01
Copyright
Copyright © Materials Research Society 2010

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