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Development of indium-rich InGaN epilayers for integrated tandem solar cells

Published online by Cambridge University Press:  25 February 2013

A. G. Melton
Affiliation:
Department of Electrical and Computer Engineering, UNC Charlotte, Charlotte, NC, US
B. Kucukgok
Affiliation:
Department of Electrical and Computer Engineering, UNC Charlotte, Charlotte, NC, US
B-Z. Wang
Affiliation:
Department of Electrical and Computer Engineering, UNC Charlotte, Charlotte, NC, US Department of Electric Information Engineering, Hebei UST, Hebei, P.R. China
N. Dietz
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, GA, US
N. Lu
Affiliation:
Department of Electrical and Computer Engineering, UNC Charlotte, Charlotte, NC, US Department of Engineering Technology, UNC Charlotte, Charlotte, NC, US
I. T. Ferguson
Affiliation:
Department of Electrical and Computer Engineering, UNC Charlotte, Charlotte, NC, US Department of Physics and Astronomy, Georgia State University, Atlanta, GA, US
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Abstract

InGaN epilayers have been investigated for use in photovoltaic solar cells for the past years. At present, almost all photovoltaic device structures reported have exhibited very low short circuit currents and thus very low solar conversion efficiency. This phenomenon has been attributed to point and extended defect chemistry in InGaN epilayers (e.g. vacancies, misfit dislocations, and V-defects), as well as to spinodal decomposition of the strained InGaN wurtzite lattice system. These defects become more dominant for higher indium concentration InGaN epilayers needed for multijunction photovoltaic device structures. In this work, we will report on the growth and characterization of indium-rich InGaN epilayers that have been grown by novel MOCVD growth technology, including the growth at superatmospheric reactor pressures.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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