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Development of High Critical Current YBCO Coated Conductors By Photo-Assisted MOCVD

Published online by Cambridge University Press:  18 March 2011

Yimin Chen
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center University of Houston, Houston, TX, 77204-5507
Xin Chen
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center University of Houston, Houston, TX, 77204-5507
Zhongjia Tang
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center University of Houston, Houston, TX, 77204-5507
PenChu Chou
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center University of Houston, Houston, TX, 77204-5507
Xin Zhang
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center University of Houston, Houston, TX, 77204-5507
Alex Ignatiev
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center University of Houston, Houston, TX, 77204-5507
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Abstract

YBa2Cu3O7 (YBCO) films have been deposited by photo-assisted MOCVD at rates of greater than 0.3μm/min on both single crystal oxide substrates and atomically textured metallic substrates. The YBCO films of thickness from 0.5μm to 3μm deposited on LaAlO3 substrates are shown to be highly atomically ordered with Jc> 1 × 106 A/cm2. CeO2 buffer layers have also been developed by photo-assisted MOCVD for the integration of YBCO with metallic substrates. The CeO2 layers were found to be crack-free when grown on nickel even above 1 micron thickness, and exhibited crystal orientation and in-plane alignment similar to that of the atomically textured Ni substrates. YBCO films grown on the thick CeO2 buffer layers on nickel substrates have shown promising results with Jc∼6 × 105 A/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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