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Determination of the Coefficient of Piezoresistivity in Aluminum Alloy Interconnect Structures

Published online by Cambridge University Press:  10 February 2011

Christopher J. Reilly ,
John E  and
Sanchez Jr
Christopher J. Reilly
Affiliation:
Department of Materials Science & Engineering University of Michigan, Ann Arbor, MI 48109
John E
Affiliation:
Department of Materials Science & Engineering University of Michigan, Ann Arbor, MI 48109
Sanchez Jr
Affiliation:
Department of Materials Science & Engineering University of Michigan, Ann Arbor, MI 48109
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Abstract

The resistance of Al thin film metallization interconnects has been measured during temperature cycling where thermal expansion mismatch between the Al and the substrate and passivation is used to induce interconnect strain. Both passivated and unpassivated interconnects were thermally cycled between 80K and 373K. The coefficient of piezoresistivity, defined as dp/dE, where ρ= resistivity and εv = volumetric strain, is measured to be 2.0 10−5Ω-cm in tension, consistent with previous results determined in bulk Al under hydrostatic pressure. We describe a model which incorporates the thermal, geometrical, and piezoresistance effects on the measured interconnect resistance during temperature changes. Thermal expansion mismatch strains and the degree of interconnect constraint by the rigid surrounding materials, which vary with interconnect aspect ratio, are considered. The application of piezoresistance analysis to measurement of local stresses and stress relaxation in advanced interconnects will be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 213
Copyright
Copyright © Materials Research Society 1999

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