Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T04:55:52.434Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

Published online by Cambridge University Press:  13 June 2012

D. Cheney ,
R. Deist ,
B. Gila ,
F. Ren ,
P. Whiting ,
J. Navales ,
E. Douglas  and
S. Pearton
D. Cheney
Affiliation:
Electrical & Computer Engineering, University of Florida, 100 Center Drive, Gainesville, FL 32611, 352-219-0290, 352-846-2877 FAX, [email protected]
R. Deist
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
B. Gila
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Chemical Engineering, University of Florida, Gainesville, FL 32611
P. Whiting
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
J. Navales
Affiliation:
Electrical & Computer Engineering, University of Florida, 100 Center Drive, Gainesville, FL 32611, 352-219-0290, 352-846-2877 FAX, [email protected]
E. Douglas
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
S. Pearton
Affiliation:
Material Science & Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

By pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.

AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.

This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

Keywords

III-Vdevicesoptical
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g09-01
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE LIST

1. Lui, R. et al. ; APL 86, 021908 (2005)Google Scholar
2. Wu, Z.H. et al. ; APL 92, 171904 (2008)Google Scholar
3. Albrecht, M et al. .; APL 92, 231909 (2008)Google Scholar
4. Diaz-Guerra, C. et al. .; JAP 100, 023509 (2006)Google Scholar
5. Reshchikov, M.A. and Morkoc, H.; JAP 97, 061301 (2005)Google Scholar
6. Yamamato, N. et al. ; JAP 94(7), 4315(2003)Google Scholar
7. Istratov, A., Vyvenko, O.; Review of Scientic Insturments, Vol 70, Num 2 (1999)Google Scholar