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Detailed Kinetics Modeling of Indium Phosphide Films in Mocvd Reactors

Published online by Cambridge University Press:  10 February 2011

Maurizio Masi ,
Carlo Cavallotti ,
Guido Radaelli  and
S. Carrà
Maurizio Masi
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano ITALY, [email protected]
Carlo Cavallotti
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano ITALY, [email protected]
Guido Radaelli
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano ITALY, [email protected]
S. Carrà
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano ITALY, [email protected]
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Abstract

The deposition kinetics of InP in MOCVD reactors is presented. The proposed chemical mechanism involves both gas phase and surface reactions. The fundamental hypothesis adopted in deriving the mechanism was a dual site dissociative adsorption of the precursors on the growing surface. In any case, all the rate constants either were taken from the literature or estimated through thermochemical methods. In addition, the deposition reactor was simulated by means of a monodimensional model that accounts for the main reactor features through the boundary layer theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 229
Copyright
Copyright © Materials Research Society 1998

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References

1. Theodoropoulos, C., Ingle, N.K., Mountziaris, T.J., Chen, Z.Y., Liu, P.L., Kieseoglou, G., Petrou, A.: J. Electrochem. Soc., 142 (1995) 2086.Google Scholar
2. Hsu, C.C., Cohen, R.M., Stringfellow, G.B.: J. Crystal Growth 63 (1983) 8.Google Scholar
3. Clawson, A.R., Elder, D.I.: J. Electron. Mater. 15 (1986) 111.Google Scholar
4. Rossetto, G., Zanella, P.: personal communication, 1995.Google Scholar
5. Masi, M., Carrà, S., Morbidelli, M., Scaravaggi, V., Preti, F.: Chem. Eng. Sci. 45, p. 3551 (1990).Google Scholar
6. Boudart, M.G., Djege-Mariadassou, G.: Kinetics of Heterogeneous Catalytic Reactions, Princeton University Press, Princeton, 1984.Google Scholar
7. Mokwa, W., Kohl, D., Heiland, G.: Phys. Rev. B., 29 (1984) 6709.Google Scholar
8. Donnelly, V.M., Mc Caulley, J.A., Shul, R.J.: Chemical Perspectives of Microelectronic Materials II, Eds. Interrante, L.V. et. al., Material Research Soc., Pittsburgh,1991.Google Scholar
9. Mountziaris, T. J., Jensen, K.F.: J. Electrochem. Soc., 138 (1991) 2426.Google Scholar