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Detailed C-V Analysis for YbMnO3/Y2O3/Si Structure

Published online by Cambridge University Press:  10 February 2011

Takeshi Yoshimura ,
Norifumi Fujimura ,
Daisuke Ito  and
Taichiro Ito
Takeshi Yoshimura
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Norifumi Fujimura
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, [email protected]
Daisuke Ito
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Taichiro Ito
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
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Abstract

YbMnO3 (Yb/Mn = 0.96) thin films were prepared on Y2O3(111)/Si(111). Although the sample exhibited ferroelectric type C-V hysteresis, the window width changed depending on the applied bias voltage. Hence, the ferroelectric type hysteresis might include the effect of space charge. To make clear the C-V behavior caused by only ferroelectricity, and to obtain the optimal relationship between ferroelectric and insulator layer thicknesses, the C-V behavior at high frequency was computed for MFIS structure. Relationships between the counter bias voltage applied to the ferroelectric layer and the thickness of dielectric layer were also demonstrated. Compared with the calculated results, experimental C-V characteristics are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 359
Copyright
Copyright © Materials Research Society 1999

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References

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