Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-08T05:25:34.182Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Titanilum Nitride Thin Films by Plasma Enhanced CVD and Reactive Sputtering

Published online by Cambridge University Press:  28 February 2011

E. F. Gleason  and
D. W. Hess
E. F. Gleason
Affiliation:
Department of Chemical Engineering University of California Berkeley, CA 94803
D. W. Hess
Affiliation:
Department of Chemical Engineering University of California Berkeley, CA 94803
Get access

Abstract

Titanium nitride films were deposited from TiCl4 /NH3 mixtures in a rf glow discharge.The deposition was carried o t at pressures between 0.1 and 0.7 Torr, RF powers of 0.1 to 1.1 watt/cm2, and temperatures between 400°C and 600°C.The films deposited at 600°C had low chlorine content and resistivities in the range of 100 to 200 μΩ-cm.Films deposited at temperatures below 500°C contained large amounts of chlorine (> 15 at %) and showed poor electrical properties.The films were further characterized by Rutherford Backscattering Spectroscopy (RBS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES).The effect of plasma parameters on the deposition rate and film properties is discussed.Comparisons to films prepared by reactive sputtering of titanium in a nitrogen atmosphere are presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 343
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Toth, L.E., Transition Metal Carbides and Nitrides, (Academic Press, New York, 1971), p.118.Google Scholar
2. Posadowski, W., Krol-Stepniewska, L., Ziolowski, Z., Thin Solid Films, 62, 347 (1979).CrossRefGoogle Scholar
3. Hmiel, A.E., J.Vac.Sci.Technol. A3, 592 (1985).Google Scholar
4. Sproul, W.D., J.Vac.Sci.Technol., A3, 580 (1985).Google Scholar
5. Clarke, P.J., J.Vac.Sci.Technol. 14 (1), 141 (1977).Google Scholar
6. Martin, P.J., Netterfield, R.P., Sainty, W.C., Vacuum, 32, 359 (1982).Google Scholar
7. Kikuchi, W., Oosawa, Y., Nishiyama, A., Proc.9th Inter.Conf.on CVD.The Electrochem.Soc., Inc., 1984, p.728.Google Scholar
8. Shizhi, L., Wu, H., Hongshun, Y., Zhongshu, W., Plasma Chemistry and Plasma Processing 4, 147 (1984).Google Scholar
9. Johanson, B.O., Sundgren, J.E., Greene, J.E., Rockett, A., Barnett, S.A., J.Vac.Sci.Technol., A3, 303 (1985).Google Scholar
10. Mumtaz, A., Class, W.H., J.Vac.Sci.Technol., 20, 345 (1982).Google Scholar
11. Helmersson, U., Johansson, B.O., Sundgren, J.E., Hentzell, H.T.G., Billigren, P., J.Vac.Sci.Technol., A3, 308 (1985).CrossRefGoogle Scholar
12. Wittmer, M., J.Vac.Sci.Technol., A3, 1797 (1985).CrossRefGoogle Scholar
13. Williams, L., and Hess, D.W., J.Vac.Sci.Technol. A1, 1810 (1983).Google Scholar