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Deposition and Characterization of In-Situ Boron Doped Polycrystalline Silicon Films for Microelectromechanical Systems Applications

Published online by Cambridge University Press:  10 February 2011

J. J. McMahon ,
J. J. McMahon ,
J. M. Melzak ,
C. A. Zorman ,
J. Chung  and
M. Mehregany
J. J. McMahon
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio
J. J. McMahon
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio
J. M. Melzak
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio
C. A. Zorman
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio
J. Chung
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve Univerisity, Cleveland, Ohio 44106.
M. Mehregany
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio
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Abstract

In an effort to develop thick, p-type polycrystalline silicon (polysilicon) films for microelectromechanical systems (MEMS) applications, in-situ boron-doped polysilicon films were deposited by a single-step APCVD process at susceptor temperatures ranging from 700°C to 955°C. The process produces boron-doped films at a deposition rate of 73 nm/min at 955°C. Spreading resistance measurements show that the boron doping level is constant at 2 × 1019 /cm3 throughout the thickness of the films. Doped films deposited at the low temperatures exhibit compressive stress as high as 666 Mpa; however films deposited at 955°C exhibited stress as low as 130 MPa. TEM and XRD show that the microstructure strongly depends on the deposition conditions. Surface micromachined, singly clamped cantilevers and strain gauges were successfully fabricated and used to characterize the residual stress of 5.0 µm-thick doped films deposited at a susceptor temperature of 955°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 31
Copyright
Copyright © Materials Research Society 2000

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References

1. Cowher, M.E. and Sedgwick, T.O., J. Electrochem. Soc., (1972), 1565.10.1149/1.2404043Google Scholar
2. Rai-Choudhury, P. and Hower, P.L., J. Electrochem. Soc., (1973), 1761.Google Scholar
3. Kamins, T.L. and Cass, T.R., Thin Solid Films, 16 (1973), 147.Google Scholar
4. Adamczewska, J. and Budzynski, T., Thin Solid Films, 113 (1984), 271.10.1016/0040-6090(84)90469-3Google Scholar
5. Beckloff, B.N., Lackey, W.J., and Pickering, E.M., J. Mater. Res., 14 (1999), 672.Google Scholar
6. Yang, K.L., Wilcoven, D., and Gimpelson, G., Proc. IEEE MEMS (1989), 66.Google Scholar
7. Mier-Schneider, D., Maibach, J., Obermeier, E., and Schneider, D., J. Micromech. Microeng. 5 (1995), 121 Google Scholar
8. Lange, P., Kirsten, M., Riethmuller, W., Wenk, B., Zwicker, G., and Morante, J.R., Sens. Actuators A, 54 (1996), 674.Google Scholar
9. Furtsch, M., Offenberg, M., Muenzel, H., Morante, J.R., Proc. SPIE, 3223 (1997), 130.Google Scholar
10. Gennisen, P.T., Bartek, M., French, P.J., and Sarro, P.M., Sens. Actuators A, 62 (1997), 636.10.1016/S0924-4247(97)01498-2Google Scholar
11. DeAnna, R.G., Fleischman, A.J., Zorman, C.A., and Mehregany, M., J. Chem Vap. Dep., 6, (1998), 280.Google Scholar
12. DeAnna, R.G., private communication.Google Scholar