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Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer Layer

Published online by Cambridge University Press:  01 February 2011

Yuen-Yee Wong ,
Edward Yi Chang ,
Tsung-Hsi Yang ,
Jet-Rung Chang ,
Yi-Cheng Chen  and
Jui-Tai Ku
Yuen-Yee Wong
Affiliation:
[email protected], National Chiao Tung University, Material Science and Engneering, R410, MIRC Building,, 1001 Ta Hsueh Rd., Hsinchu, N/A, Taiwan
Edward Yi Chang
Affiliation:
[email protected], National Chiao Tung University, Material Science and Engineering, 1001, Ta-Hsueh Rd., Hsinchu, N/A, Taiwan
Tsung-Hsi Yang
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001, Ta Hsueh Rd., Hsinchu, N/A, Taiwan
Jet-Rung Chang
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001, Ta Hsueh Rd., Hsinchu, N/A, Taiwan
Yi-Cheng Chen
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001, Ta Hsueh Rd., Hsinchu, N/A, Taiwan
Jui-Tai Ku
Affiliation:
[email protected], National Chiao Tung University, Electrophysics, 1001, Ta Hsueh Rd., Hsinchu, N/A, Taiwan
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Abstract

The defect structure of the GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) technique was found to be dependent on the AlN buffer layer growth temperature. This buffer growth temperature controlled the defect density in GaN film but had shown contrary effects on the density of screw threading dislocation (TD) and edge TD. The density of screw TD was high on lower temperature buffer but low on the higher temperature buffer. Meanwhile the density of edge TD had shown the opposite. Further examinations have suggested that the defect structure was closely related to the stress in the GaN film, which can be controlled by the growth temperature of the AlN buffer. Using the 525°C AlN buffer, optimum quality GaN film with relatively low screw and edge TDs were achieved.

Keywords

molecular beam epitaxy (MBE)nitridedefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-13
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Corrion, A. Poblenz, C. Waltereit, P. Palacios, T. Rajan, S. Mishra, U. K. and Speck, J.S. IEICE Trans. Electron. E89-C, 906 (2006).Google Scholar
2. Manfra, M. J. Weimann, N. G. Hsu, J. W. P. Pfeiffer, L. N. West, K. W. and Chuet, S. N. G. Appl. Phys. Lett. 81, 1456 (2002).Google Scholar
3. Li, L. K. Alperin, J. Wang, W. I. Look, D. C. and Reynolds, D. C. Appl. Phys. Lett. 76, 742 (2000).Google Scholar
4. Ambacher, O. Smart, J. Shealy, J. R. Weimann, N. G. Chu, K. Murphy, M. Schaff, W. J. Eastman, L. F. Dimitrov, R. Wittmer, L. Stutzmann, M. Rieger, W. and Hilsenbeck, J. J. Appl. Phys. 85, 3222 (1998).Google Scholar
5. Stutzmann, M. Ambacher, O. Karrer, U. Pimenta, A. L. Neuberger, R. Schalwig, J. Dimitrov, R. Schuck, P. J. and Grober, R. D. Phys. Stat. Sol. (b) 228, 505 (2001).Google Scholar
6. Sumiya, M. and Fuke, S. MRS Internet. J. Nitride Semocond. Res. 9, 1 (2004).Google Scholar
7. Yoshida, S. Misawa, S. and Gonda, S. Appl. Phys. Lett. 42, 427 (1982).Google Scholar
8. Amano, H. Sawaki, N. Akasaki, I. and Toyoda, Y. Appl. Phys. Lett 48, 353 (1985).Google Scholar
9. Koblmueller, G. Averbeck, R. Geelhaar, L. Riecher, H. Hösler, W., and Pongratz, P. J. Appl. Phys. 93, 9591 (2003).Google Scholar
10. Storm, D. F. Katzer, D. S. Binari, S. C. Shanabrook, B. V. Zhou, L. and Smith, D. J. Appl. Phys. Lett. 85, 3786 (2004).Google Scholar
11. Zhou, L. Smith, D. J. Storm, D. F. Katzer, D. S. Binari, S. C. and Shanabrook, B. V. Appl. Phys. Lett. 88, 011916 (2006).Google Scholar
12. Shim, B. Okita, H. Jeganathan, K. Shimizi, M. and Okumura, H. Jpn. J. APpl. Phys. 42, 2265 (2003).Google Scholar
13. B, Heying, Wu, X. H. Keller, S. Li, Y. Kapolnek, D. Keller, B. P. DenBaars, S. P. and Speck, J. S. Appl. Phys. Lett. 68, 643 (1995).Google Scholar
14. Trampert, A. Brandt, O. and Ploog, K. H.. Crystal Structure of Group III Nitrides., Gallium Nitride (GaN) I, ed. Pankove, J. I. and Moustakas, T. D. (Academic Press, 1999) pp.167–192.Google Scholar