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Degradation Mechanism of GaN-based LEDs With Different Growth Parameters

Published online by Cambridge University Press:  31 January 2011

Leung Ka Kuen ,
W.K. Patrick Fong ,
Paddy Kwok Leung Chan  and
Charles Surya
Leung Ka Kuen
Affiliation:
[email protected]@polyu.edu.hk, The Hong Kong Polytechnic University, EIE, Hong Kong, Hong Kong
W.K. Patrick Fong
Affiliation:
[email protected], The Hong Kong Polytechnic University, EIE, Hong Kong, Hong Kong
Paddy Kwok Leung Chan
Affiliation:
[email protected], The Hong Kong Polytechnic University, ME, Hong Kong, Hong Kong
Charles Surya
Affiliation:
[email protected]@polyu.edu.hk, The Hong Kong Polytechnic University, EIE, Hong Kong, Hong Kong
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Abstract

We investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed.

Keywords

chemical vapor deposition (CVD) (deposition)optoelectronicIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B08-06
Copyright
Copyright © Materials Research Society 2010

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References

1. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Letters 64, 1687–1689 (1994).10.1063/1.111832Google Scholar
2. Nakamura, S., Mukai, T., and Senoh, M., Jpn. Appl. Phys. 30, 1998 (1991).10.1143/JJAP.30.L1998Google Scholar
3. Nakamura, S., Senoh, M., Magahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiooku, H., and Sugimoto, Y., Jpn. Appl. Phys. 35, L217 (1996).10.1143/JJAP.35.L217Google Scholar
4. Leu, S., Protzmann, H., H�hnsdorf, F., Stolz, W., Steinkirchner, J., and Hufgard, E., J. Crystal Growth 195, 91–97 (1998).10.1016/S0022-0248(98)00592-2Google Scholar
5. Deatcher, C.J., Liu, C., Cheong, M.G., Smith, L.M., Rushworth, S., Widdowson, A., and Watson, I.M., Chem. Vap. Deposition 10 187–190 (2004).10.1002/cvde.200304171Google Scholar
6. Keller, S., Chichibu, S.F., Minsky, M.S., Hu, E., Mishra, U.K., and DenBaars, S.P., J. Cryst. Growth 195, 258 (1998).10.1016/S0022-0248(98)00680-0Google Scholar
7. Surya, C., Ng, S. H., Brown, E. R., Maki, P. A., IEEE Transactions on Electron Devices 41, 11, 2016 (1994).10.1109/16.333819Google Scholar