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Defects in Hydrogenated Amorphous Silicon Carbide Alloys using Electron Spin Resonance and Photothermal Deflection Spectroscopy

Published online by Cambridge University Press:  31 January 2011

Brian J. Simonds ,
Feng Zhu ,
Josh Gallon ,
Jian Hu ,
Arun Madan  and
Craig Taylor
Brian J. Simonds
Affiliation:
[email protected], Colorado School of Mines, Physics, Golden, Colorado, United States
Feng Zhu
Affiliation:
[email protected], MVSystems, Inc, Golden, Colorado, United States
Josh Gallon
Affiliation:
[email protected], Colorado School of Mines, Physics, Golden, Colorado, United States
Jian Hu
Affiliation:
[email protected], MVSystems, Inc, Golden, Colorado, United States
Arun Madan
Affiliation:
[email protected], MVSystems, Inc., Golden, Colorado, United States
Craig Taylor
Affiliation:
[email protected], Colorado School of Mines, Physics, Golden, Colorado, United States
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Abstract

Hydrogenated amorphous silicon carbide alloys are being investigated as a possible top photoelectrode in photoelectrochemical cells used for hydrogen production through water splitting. In order to be used as such, it is important that the effects of carbon concentration on bonding, and thus on the electronic and optical properties, is well understood. Electron spin resonance experiments were performed under varying experimental conditions to study the defect concentrations. The dominant defects are silicon dangling bonds. At room temperature, the spin densities varied between 1016 and 1018 spins/cm3 depending on the carbon concentration. Photothermal deflection spectroscopy, which is an extremely sensitive measurement of low levels of absorption in thin films, was performed to investigate the slope of the Urbach tail. These slopes are 78 meV for films containing the lowest carbon concentration and 98 meV for those containing the highest carbon concentration.

Keywords

amorphousdefectselectron spin resonance
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A18-05
Copyright
Copyright © Materials Research Society 2009

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