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Defects in bulk ZnO studied by steady-state and time-resolved photoluminescence

Published online by Cambridge University Press:  01 February 2011

Michael A. Reshchikov
Michael A. Reshchikov*
Affiliation:
[email protected], Virginia Commonwealth University, Department of Physics, 1020 West Main Street, Richmond, VA, 23284, United States, 804-828-1613, 804-828-7073
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Abstract

Unintentionally doped bulk ZnO samples were grown by hydrothermal method in Tokyo Denpa Co. Ltd. (Japan) and MTI Corporation. At low temperatures the PL spectrum contained a very broad band with the peak position (between 2.0 and 2.4 eV) depending on the excitation intensity. Evolution of the PL spectrum after a pulse excitation revealed that the broad band is composed of an orange (OL) and green (GL) luminescence bands having maxima at 1.96 and ∼2.35 eV, respectively. The GL band dominated at times up to 1 ms and then disappeared. The OL band decayed as approximately t−1 over a wide time interval, and its spectrum could be recorded even 24 hours after the excitation source was switched off. The slow nonexponential decay of the OL band is attributed to transitions from shallow donors to a deep acceptor (donor-acceptor pair transitions).

Keywords

defectsluminescenceII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L11-15
Copyright
Copyright © Materials Research Society 2008

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