Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-28T04:07:16.770Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping

Published online by Cambridge University Press:  01 February 2011

Ji-Soo Park ,
J. Bai ,
M. Curtin ,
B. Adekore ,
Z. Cheng ,
M. Carroll ,
M. Dudley  and
A. Lochtefeld
Ji-Soo Park
Affiliation:
[email protected], AmberWave Systems Corp., Research, 13 Garabedian Drive, Salem, NH, 03079, United States, 603 870-8677, 603 870-8608
J. Bai
Affiliation:
[email protected], AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
M. Curtin
Affiliation:
[email protected], AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
B. Adekore
Affiliation:
[email protected], AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
Z. Cheng
Affiliation:
[email protected], AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
M. Carroll
Affiliation:
[email protected], AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
M. Dudley
Affiliation:
[email protected], Stony Brook Univ., Dept. of Materials Science & Engineering, Stony Brook, NY, 11794, United States
A. Lochtefeld
Affiliation:
[email protected], AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
Get access

Abstract

Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls.Results were achieved through a combination of conventional photolithography, reactive ion etching of SiO2, and selective growth of Ge as thin as 450 nm.It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films.This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

Keywords

dislocationsGetransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F10-05
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lee, M., Leitz, C. W, Cheng, Z., Pitera, A. J, Langdo, T., Currie, M. T, Taraschi, G., Fitzgerald, E. A, and Antoniadis, D. A, Appl. Phys. Lett. 79, 3344 (2001).Google Scholar
2. Chui, C. O, Kim, H., Chi, D., Triplett, B. B, McIntyre, P. C, and Saraswat, K. C, Tec. Dig. -Int. Electron Device Meet. 2002, 437.Google Scholar
3. Fitzgerald, E. A, Xie, Y. –H., Monroe, D. Silverman, P. J, Kuo, J. M, Kortan, A. R, Thiel, F. A, and Weir, B. E, J. Vac. Sci. Technol. B 10, 1807 (1992)Google Scholar
4. Currie, M. T, Samavedam, S. B, Langdo, T. A, Leitz, C. W, and Fitzgerald, E. A, Appl. Phys. Lett. 72, 1718 (1998).Google Scholar
5. Nakaraha, S. Tezuka, T. Sugiyama, N. Moriyama, Y. and Takagi, S. Appl. Phys. Lett. 83, 3516 (2003).Google Scholar
6. Luan, H. -C., Lim, D. R, Lee, K. K, Chen, K. M, Sandland, J. G, Wada, K. and Kimerling, L. C, Appl. Phys. Lett. 75, 2909 (1999).Google Scholar
7. Langdo, T.A., Leitz, C.W., Currie, M.T., Fitzgerald, E.A., Lochtfeld, A. and Antoniadis, D.A., Appl. Phys. Lett. 76, 3700 (2000).Google Scholar
8. Li, Q. Han, S. M, Brueck, S. R. J. Hersee, S. Jiang, Y. –B., and Xu, H. Appl. Phys. Lett. 83, 5032 (2003).Google Scholar
9. Lou, J.-C., Oldham, W.G., Kawayoshi, H. and Ling, P. J. Appl. Phys. 71, 3225 (1992).Google Scholar
10. Park, J.-S., Curtin, M. Bai, J. Carroll, M. and Lochtefeld, A. Jpn. J. Appl. Phys. 45, 8581 (2006).Google Scholar
11. Park, J.-S., Bai, J. Curtin, M. Adekore, B. Carroll, M, and Lochtefeld, A. Appl. Phys. Lett. 90, 052113 (2007).Google Scholar
12. Bai, J. Park, J.-S., Cheng, Z. Curtin, M. Adekore, B. Carroll, M. Lochtefeld, A. and Dudley, M. Appl. Phys. Lett. 90, 101902 (2007).Google Scholar
13. Klapper, H. Mater. Chem. Phys. 66, 101 (2000).Google Scholar
14. Tseng, H.-C., Chang, C. Y. Pan, F. M. Chen, J. R. and Chen, L. J. Appl. Phys. Lett. 71, 2328 (1997).Google Scholar
15. Lim, S. Song, S. Lee, G. Yoon, E. and Lee, J. J. Vac. Sci. Technol. B 22, 682 (2004).Google Scholar
16. Karmous, A. Berbezier, I. and Ronda, A. Phys. Rev. B 73, 075323 (2006).Google Scholar
17. Zacharias, M. and Streitenberger, P. Phys. Rev. B 62, 8391 (2000).Google Scholar