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Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy

Published online by Cambridge University Press:  13 March 2015

Sergei Rouvimov ,
Valentin N. Jmerik ,
Dmitrii V. Nechaev ,
Valentin V. Ratnikov ,
Alexey A. Toropov ,
Eugenii A. Shevchenko ,
Pavel N. Brunkov ,
Mikolai V. Rzheutski ,
Eugenii V. Lutsenko  and
Sergey V. Ivanov
Sergei Rouvimov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
Valentin N. Jmerik
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Dmitrii V. Nechaev
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Valentin V. Ratnikov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Alexey A. Toropov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Eugenii A. Shevchenko
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Pavel N. Brunkov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Mikolai V. Rzheutski
Affiliation:
Stepanov Institute of Physics of NAS Belarus, Independence Ave. 68, Minsk 220072, Belarus
Eugenii V. Lutsenko
Affiliation:
Stepanov Institute of Physics of NAS Belarus, Independence Ave. 68, Minsk 220072, Belarus
Sergey V. Ivanov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
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Abstract

AlGaN-based SQW heterostructures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 substrates have been studied with high resolution transmission electron microscopy (HR TEM), photoluminescence spectroscopy and x-ray diffraction. The high-temperature (780°C) synthesis of the AlN buffer layer nucleated on c-Al2O3 by a migration enhanced epitaxy and including several ultra-thin GaN interlayers grown under moderate N-rich conditions was shown to be the optimum approach for lowering the threading dislocations density down to 108-109 cm-2. HR TEM study has confirmed the fine structure of single quantum wells (SQW) formed by a sub-monolayer digital alloying technique and revealed different kinds of compositional inhomogeneities in the AlxGa1-xN barrier layers of the heterostructures, including the formation of Al-rich barriers induced by the temperature-modulated epitaxy and the spontaneous compositional disordering along the growth axis for x=0.6-0.7. The influence of these phenomena on the parameters of the mid-UV stimulated emission observed in the SQW structures has been studied as well.

Keywords

molecular beam epitaxy (MBE)nanostructurenucleation & growth
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1741: Symposium AA – Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials , 2015 , mrsf14-1741-aa04-04
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

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