Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-08T00:09:26.204Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Analyses in VLSI Devices by TEM Observation and Process Simulation

Published online by Cambridge University Press:  03 September 2012

H. Mikoshiba ,
N. Nishio ,
T. Matsumoto ,
H. Kikuchi ,
T. Kitano  and
H. Kaneko
H. Mikoshiba
Affiliation:
NEC Corporation, VLSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa, Japan
N. Nishio
Affiliation:
NEC Corporation, VLSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa, Japan
T. Matsumoto
Affiliation:
NEC Corporation, VLSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa, Japan
H. Kikuchi
Affiliation:
NEC Corporation, VLSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa, Japan
T. Kitano
Affiliation:
NEC Corporation, VLSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa, Japan
H. Kaneko
Affiliation:
NEC Corporation, VLSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa, Japan
Get access

Abstract

This paper presents several examples of defect analyses carried out in actual VLSI failure analyses and experiments, using TEM technique, process simulation and other advanced analytical tools. New TEM techniques are also described to observe a precise location which has failed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 629
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nishio, N., Shiolani, K., Kitakata, M. and Mikoshiba, H., Ext. Abst. 22nd SSDM (Sendai, Japan), 1169 (1990).Google Scholar
2. Izai, H., Seiko Instruments Inc. (private communication).Google Scholar
3. Kitakata, M., Toyokawa, F., Mikami, M. and Tsuya, H., Ext. Abst. 174th ECS Meeting, 694 (1988).Google Scholar
4. Onishi, S., Ayukawa, A., Tanaka, K. and Sakiyama, K., J. Electrochem. Soc, 138, 1439 (1991).Google Scholar
5. Horiuchi, M., Tamura, M. and Aoki, S., Nue. Instni. Methods Phys. Research, B37/38, 285 (1989).CrossRefGoogle Scholar
6. Tamura, M., Horiuchi, M. and Kawamoto, Y., Nue. Instni. Methods Phys. Research, B38/38, 329 (1989).CrossRefGoogle Scholar
7. Kitajima, H. and Mikoshiba, H., Ext. Abst. Jap. Soc. Appl. Phys., 617 (1990).Google Scholar
8. Ohi, S., Matsumoto, C., Kaneko, H., Ito, N. and Mikoshiba, H., Materials and Process Characterization for VLSI (Shanghai, China), 490 (1991).Google Scholar
9. Kaneko, H., Hasunuma, M., Sawada, A., Kawanoue, T., Kohanawa, Y., Komastu, S. and Miyauchi, M., 28th Proc. Relia. Phys., 194 (1990).Google Scholar
10. Nishio, N., Taketomi, T., Morita, M., Ohi, S. and Mikoshiba, H., Ext. Abst. 180th ECS Meeting, 652 (1991).Google Scholar
11. Kikuchi, H., Toyokawa, F., Sakamoto, M. and Mikami, M., Ext. Abst. 177th ECS Meeting, 654 (1990).Google Scholar
12. Kikuchi, H., Kitakata, M., Toyokawa, F. and Mikami, M., Appl. Phys. Lett., 54, (5), 463 (1989).CrossRefGoogle Scholar
13. Kitano, T., Phys. Stat. Sol., (a) 121, 341 (1991).Google Scholar
14. Kudou, O., NEC technical journal, 44, 9 (1991).Google Scholar
15. Kitano, T., Ishikawa, T., Mastui, J., Akimoto, K., Mizuki, J. and Kawase, Y., Japan. J. Appl. Phys., 26, L108 (1987).Google Scholar
16. Kitano, T., Kimura, S. and Ishikawa, T., Appl. Phys. Lett., 60, 177 (1992).Google Scholar