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Deep centers in GaN layers grown on epitaxial lateral overgrowth templates by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  01 February 2011

Serguei A Chevtchenko ,
J. Xie ,
Y. Fu ,
X. Ni  and
H. Morkoç
Serguei A Chevtchenko
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, 601 West Main St., P.O. Box 843072, Richmond, VA, 23284-3072, United States, (804) 8277000 Ext. 451
J. Xie
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering Department, Richmond, VA, 23284-3072, United States
Y. Fu
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering Department, Richmond, VA, 23284-3072, United States
X. Ni
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering Department, Richmond, VA, 23284-3072, United States
H. Morkoç
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering Department, Richmond, VA, 23284-3072, United States
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Abstract

The dependence of traps and their concentration in GaN on the quality of templates, on which the layers are grown, has been studied by deep-level transient spectroscopy (DLTS). Thin GaN layers studied were grown on GaN templates employing conventional epitaxial lateral overgrowth (ELO) and nano-ELO with SiNx nanonetwork. The concentrations of traps found in these layers were compared with a reference sample grown on a standard GaN template not utilizing ELO. Two traps A (0.55 eV – 0.58 eV) and B (0.20 eV – 0.23 eV) were detected in the temperature range from 80 K to 400 K. A reduction of traps in layers grown on the ELO and nano-ELO templates was noted. We attribute this reduction to the reduction of threading dislocation density and as a result reduced capture of point defects and complexes as part of dislocation core structure and/or reduced formation of defects and complexes in the vicinity of line defects where the formation can be energetically favorable.

Keywords

deep level transient spectroscopy (DLTS)dislocationsIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-48
Copyright
Copyright © Materials Research Society 2007

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References

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