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Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence

Published online by Cambridge University Press:  10 February 2011

J. T. Hsieh ,
J. M. Hwang ,
H. L. Hwang  and
W. H. Hung
J. T. Hsieh
Affiliation:
Institute of Electronic Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C.
J. M. Hwang
Affiliation:
Institute of Electronic Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Institute of Electronic Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C.
W. H. Hung
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan, R.O.C.
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Abstract

Damage-free etching of GaN by Cl2, assisted by an ArF (193 nrm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G10.6
Copyright
Copyright © Materials Research Society 1999

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