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CVD-Graphene Complementary Logic on Ultra-thin Multilayer Hexagonal Boron Nitride
Published online by Cambridge University Press: 30 March 2012
Abstract
Graphene, a two-dimensional carbon allotrope, has raised great interests as a material candidate for future electronics due to its superb carrier transport and unique physics. The demand for future-generation large-scale carbon-based electronics motivates assembly of large-area graphene and selection of ideal substrate material that best preserves the transport property of graphene. In this work, CVD-assembled large-area graphene on thin multilayer hexagonal boron nitride (h-BN) is employed to demonstrate the basic building block of digital circuit - inverter prototype made of two graphene-channel field-effect transistors (GFETs). The doping in the CVD-grown graphene, probed via electrical measurements, is implemented through non-uniform local surface chemistry. The full transfer response of the graphene logic inverter is demonstrated in the localized P/N doping region.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa15-52
- Copyright
- Copyright © Materials Research Society 2012
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