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CVD Growth and Passivation of W and TiN Nanocrystals for Non-volatile Memory Applications

Published online by Cambridge University Press:  01 February 2011

Guillaume Gay ,
Djamel Belhachemi ,
Jean-Philippe Colonna ,
Stéphane Minoret ,
Arnaud Beaurain ,
Bernard Pelissier ,
Marie-Christine Roure ,
Dominique Lafond ,
Eric Jalaguier  and
Gabriel Molas
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Guillaume Gay
Affiliation:
[email protected]@gmail.com, CEA LETI MINATEC, Grenoble, France
Djamel Belhachemi
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Jean-Philippe Colonna
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Stéphane Minoret
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Arnaud Beaurain
Affiliation:
[email protected], CNRS-LTM, Grenoble, France
Bernard Pelissier
Affiliation:
[email protected], CNRS-LTM, Grenoble, France
Marie-Christine Roure
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Dominique Lafond
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Eric Jalaguier
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Gabriel Molas
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
Thierry Baron
Affiliation:
[email protected], CNRS-LTM, Grenoble, France
Barbara De Salvo
Affiliation:
[email protected], CEA LETI MINATEC, Grenoble, France
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Abstract

In this paper, we present CVD (Chemical Vapor Deposition) growth and passivation of tungsten (W) and titanium nitride (TiN) nanocrystals (NCs) on silicon dioxide and silicon nitride for use as charge trapping layer in floating gate memory devices. NCs are deposited in an 8 inches industrial CVD Centura tool. W and TiN are chosen for being compatible with MOSFET memory fabrication process. For protecting NCs from oxidation, a silicon shell is selectively deposited on them. Moreover, for a better passivation, TiN NCs are encapsulated in silicon nitride (Si3N4) in order to get rid of oxidation issues. After high temperature annealing (1050°C under N2 during 1 minute) XPS measurements point out that NCs are still metallic, which makes them good candidates for being used as charge trapping layer in floating gate memories.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructuremetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G06-06
Copyright
Copyright © Materials Research Society 2010

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References

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