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Current Transport Mechanisms for MSM-Photodetectors on ZnO:N Thin Films

Published online by Cambridge University Press:  31 January 2011

Tingfang Yen ,
Alan Haungs ,
Sung Jin Kim ,
Alexander Cartwright  and
Wayne A. Anderson
Tingfang Yen
Affiliation:
[email protected], University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Alan Haungs
Affiliation:
[email protected], University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Sung Jin Kim
Affiliation:
[email protected], University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Alexander Cartwright
Affiliation:
[email protected], University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Wayne A. Anderson
Affiliation:
[email protected], University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
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Abstract

Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 A/W; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.

Keywords

oxidethin filmion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-41
Copyright
Copyright © Materials Research Society 2010

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