Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-27T02:22:33.497Z Has data issue: false hasContentIssue false
  • English
  • Français

Current induced organization in thin nanocrystalline gold films during deposition

Published online by Cambridge University Press:  21 March 2011

P. Chaoguang ,
J. Ederth ,
L. B. Kish  and
C. G. Granqvist
P. Chaoguang
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
J. Ederth
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
L. B. Kish
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
C. G. Granqvist
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
Get access

Abstract

Nanocrystalline gold films were prepared by advanced gas deposition. Electric field induced effects on the film structure during and after deposition was investigated. A dc electric field in the range 2 ≤U a ≤ 8 V/cm, was applied parallel to the substrate surface and led to changes of film microstructure and resistivity. In another set of experiments, films deposited at U a = 0 were exposed to electric fields of similar strength after deposition. Film degradation could be understood from a mechanism consistent with a biased-percolation effect. Our results show that it is possible to control the film structure by varying the strength of an applied electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y8.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Birringer, R. and Gleiter, H., in Advances in Materials Science and Engineering, Cahn, R. W. (ed.) (Pergamon, New York, 1988)Google Scholar
[2] Tanimoto, H., Mizubayashi, H., Fujita, H., and Okuda, S., J. Phys. (Paris) IV, Coll C8 (1996) 199 Google Scholar
[3] Tanimoto, H., Fujita, H., Mizubayashi, H., Sasaki, Y., Kita, E., and Okuda, S., Mater. Sci. Eng. A217/218 (1996) 108 Google Scholar
[4] Tang, F. and Okuda, S., Materials Transactions JIM, 37 (1996) 1813 Google Scholar
[5] Granqvist, C. G. and Buhrman, R. A., J. Appl. Phys. 47 (1976) 2200 Google Scholar
[6] Siegel, R. W., Annu. Rev. Mater. Sci. 21 (1991) 559 Google Scholar
[7] Gleiter, H., Nano Struct. Mater. 1 (1992) 1 Google Scholar
[8] Hayashi, C., Uyeda, R., and Tasaki, A., “Ultra-Fine Particles: Exploratory Science and Technology” (Noyes, Westwood, New Jersey, 1997)Google Scholar
[9] Ederth, J., Kish, L. B., Olsson, E., and Granqvist, C. G., J. Appl. Phys. 88 (2000) 6578 Google Scholar
[10] Porath, D., Bar-Sadeh, E., Wolovelsky, M., Greyevsky, A., Goldstein, Y., and Millo, O., J. Vac. Sci. Technol. 13 (1995) 1165 Google Scholar
[11] Scorzoni, A., Neri, B., Caprile, C., and Fantini, F., Mater. Sci. Rep. 7 (1991) 143 Google Scholar
[12] Pennetta, C., Gingl, Z., Kiss, L. B., Reggiani, L., De Vittorio, M., Cola, A., and Mazzer, M., Microelectron. Reliab. 38 (1998) 249 Google Scholar
[13] Pennetta, C., Kiss, L. B., Gingl, Z., and Reggiani, L., Europ. Phys. J. 12 (1999) 61 Google Scholar
[14] Pennetta, C., Reggiani, L., Kiss, L. B., Physica A 266 (1999) 214 Google Scholar
[15] Söderlund, J., Kiss, L. B., Niklasson, G. A., and Granqvist, C. G., Phys. Rev. Lett. 80 (1997) 2386 Google Scholar
[16] Chopra, K. L., J. Appl. Phys. 37 (1966) 2249 Google Scholar
[17] Chopra, K. L., Appl. Phys. Lett. 7 (1965) 140 Google Scholar