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Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN

Published online by Cambridge University Press:  01 February 2011

Jayantha Senawiratne ,
Martin Strassburg ,
Adam Payne ,
Ali Asghar ,
William Fenwick ,
Nola Li ,
Ian Ferguson  and
Nikolaus Dietz
Jayantha Senawiratne
Affiliation:
[email protected]
Martin Strassburg
Affiliation:
[email protected]
Adam Payne
Affiliation:
[email protected]
Ali Asghar
Affiliation:
[email protected]
William Fenwick
Affiliation:
[email protected]
Nola Li
Affiliation:
[email protected]
Ian Ferguson
Affiliation:
[email protected]
Nikolaus Dietz
Affiliation:
[email protected]
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Abstract

Optical and structural properties of in situ Cu doped GaN thin films grown on sapphire substrates were optically investigated by means of Raman, photoluminescence (PL), and absorption spectroscopy. Different Cu concentrations in the films were analyzed by secondary ion mass spectroscopy (SIMS) and found to vary from 2×1016 cm-3 to 5×1017 cm-3. Raman studies confirmed high crystalline quality of GaN:Cu with no major structural damages due to Cu incorporation. PL investigation revealed that the origin of the emission around 2.4 eV is most likely due to Cu incorporation. The electrical conductivity of the samples was analyzed by Hall measurements and the found semi-insulating behavior was assigned to the compensation of intrinsic donors by the deep Cu acceptor states.

Keywords

CuopticalGa
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-08
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1 Senawiratne, J., Strassburg, M., Payne, A. M., Asghar, A., Fenwick, W. E., Li, N., Wagner, M., Hoffmann, A., Dietz, N., and Ferguson, I. T., submitted to Phys. Stat. Sol. (c) (2005).Google Scholar
2 Feng, Z.C., Payne, A.M., Nicol, D., Helm, P.D., Ferguson, I.. Senawiratne, J., Strassburg, M., Dietz, N., Hums, Ch. and Hoffman, A., in “GaN and related alloys 2003”, ed, Ng, H.M.. Wraback, M., Hiramatsu, K., Grandjean, N.; Mat. Res. Soc. Symp. Proc. 798, pp. 545–550 (2004).Google Scholar
3 Limmer, W., Ritter, W., Sauer, R., Mensching, B., Liu, C., and Rauschenbach, B., Appl. Phys. Lett 72, 2589, (1998).CrossRefGoogle Scholar
4 Boudart, B., Guhel, Y., Pesant, J. C., Dhamelincourt, P., and Poisson, M.A., J. Phys.: Condens. Matter 16, 49 (2004).Google Scholar
5 Arguello, C.A., Rousseau, D. L., and Porto, S.P.S., Phys. Rev. 181, 1351 (1969).CrossRefGoogle Scholar
6 Popovici, G., Xu, G. Y., Botchkarev, A., Kim, W., Tang, H., Salvador, A., Morkoc, M., Strange, R., and White, J. O., J. Appl. Phys. 82, 4020 (1997).CrossRefGoogle Scholar
7 Ashcroft, N. W., Mermin, N. D.: Solid State Physics (Holt, Rinehart and Winston, New York 1976).Google Scholar
8 Manchon, D.D., Barker, A. S., Dean, P. J., Zetterstrom, R. B.: Solid State Commun. 8, 1227 (1970).CrossRefGoogle Scholar
9 Azuhata, T., Sota, T., Suzuki, K., Nakamura, S.: J. Phys.: Condens. Matter 7, L129 (1995).Google Scholar
10 Monteiro, T., Boemare, C., Soares, M. J., Alves, E., and Lie, C., Physica B, 308–310, 42 (2001).CrossRefGoogle Scholar
11 Korotkov, R. K., Gregie, J. M., and Wesseles, B. W., Amter. Res. Soc. Symp. Proc. 639, G6.39 (2001).CrossRefGoogle Scholar
12 Neugebauer, J., and Van de Walle, C. G., Appl. Phys. Lett. 69, 503 (1996).CrossRefGoogle Scholar
13 Nakamura, S. and Fosol, G., The Blue Laser Diode (Springer, Berlin, 1998).Google Scholar
14 Sheu, J. K., Su, Y. K., Chi, G. C., Pong, B. J., Chen, C. Y., Huang, C. N., and Chen, W. C., J. Appl. Phys. 84, 4590 (1998).CrossRefGoogle Scholar
15 Bayer, M. W. et al. ., Appl. Phys. Lett. 74, 3281 (1999).Google Scholar
16 Bozdog, C., Chow, K. H., Watkins, G. D., Sunakawa, H., Kuroda, N., and Usai, A., Phys. Rev. B 62, 12923, (2000).CrossRefGoogle Scholar
17 Kaschner, A., Siegle, H., Kaczmarczyk, G., Strasbug, M., Hoffmann, A., Thomsen, C., Birkle, U., Einfeldt, S., and Hommel, D., Appl. Phys. Lett. 74, 94720, (1999).Google Scholar
18 Nakamura, I., Iwasa, N., Senoh, M., and Mukai, Jpn. J. Appl. Phys., Part 1 31, 1258 (1992).CrossRefGoogle Scholar