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Crystallographic and morphological properties of magnetron sputtered Ti and Zr thin films

Published online by Cambridge University Press:  21 March 2011

Eliane F. Chinaglia  and
Ivette C. Oppenheim
Eliane F. Chinaglia
Affiliation:
Universidade de São Paulo, Instituto de Física PO Box 66318, 05315-970 São Paulo, SP, Brasil
Ivette C. Oppenheim
Affiliation:
Universidade de São Paulo, Instituto de Física PO Box 66318, 05315-970 São Paulo, SP, Brasil
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Abstract

Crystallographic and surface morphological characteristics of polycrystalline hcp Ti and Zr thin films were studied as a function of the homologous substrate temperature TS/TM and the thickness t of the films (28 nm ≤ t ≤ 380 nm). TS is the substrate temperature during deposition and TM is the melting point of the film's material. For the whole range of considered temperatures (0.14 ≤ TS/TM ≤ 0.48) Zr films presented a {0002} crystallographic orientation. As TS/TM increased, Ti films suffered a transition from a columnar grain structure with {0002} preferential crystallographic orientation to a cone-like-shape grain structure with {1011} preferential crystallographic orientation. Our results suggest that Zr films suffer a structural transition from Zone T to Zone II at temperatures similar to those predicted by Thornton's Structure Zone Model for thick films while Ti films do not have a microstructure typical of Zone II even for relatively high values of TS/TM, presenting a transition from Zone I to Zone T in the studied range of temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O3.26
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Yamauchi, T., Zaima, S., Mizuno, K., Kitamura, H., Koide, Y. and Yasuda, Y., J. of Appl. Phys., 69(10), 7050 (1990).Google Scholar
2. Amor, S.Ben, Rogier, B., Baud, G., Jcquet, M., Nardin, M., Mat. Sci. Eng., B57, 28 (1998).Google Scholar
3. Laughlin, D.E., Cheong, B., Feng, Y.C., Lambeth, D.N., Lee, L., Wong, B., Scripta Metall. Mat., 33(10/11), 1525 (1995).Google Scholar
4. Knorr, D.B., Merchant, S.M., Bilberger, M.A., J. Vac. Sci. Technol. B, 16(5), 2734 (1998).Google Scholar
5. Movchan, B.A., Demchishin, A.V., Fiz. Met. Metalloved, 28, 653 (1969).Google Scholar
6. Thornton, J., Ann. Rev. Mater. Sci., 7, 239 (1977).Google Scholar
7. Grovenor, C.R.M., Hentzell, H.T.G., Smith, D.A., Acta Metall., 32(5), 773 (1984).Google Scholar
8. Barna, P.B., Adamik, M., Thin Solid Films, 317, 27 (1998).Google Scholar
9.Films with thickness ranging from 10−1 to 103 µm are considered in refs. [5, 7].Google Scholar
10.Films with thickness ranging from 10–2 to 102 µm are considered in refs. [6, 8].Google Scholar
11. Barna, P.B., Adamik, M., Protective coatings and thin films: Synthesis, characterization and applications, in: Pauleau, Y., Barna, P.B. (eds), NATO ASI series, 3. High Technology, 21, Kluwer academic publishers, Dordrecht, 279 (1997).Google Scholar
12. Thompson, C.V., Annu. Rev. Matte. Sci, 30, 159 (2000).Google Scholar
13. Adamik, M., Barna, P.B., Tomov, I., Thin Solid Films, 359, 33 (2000).Google Scholar
14. Fantini, M.C., Gorenstein, A., Subramanian, K., Mainkar, N., Stockbauer, R.L., Kurtz, R.L., Brazilian Journal of Physics, 24, 3, 775 (1994).Google Scholar
15. Klug, H.P. and Alexander, L.E., X-ray diffraction Procedures for polycrystalline and amorphous materials, Wiley, New York (1974).Google Scholar
16.JCPDS-International center for diffraction data (1995), Ti - 05-0685, Zr - 05-0665.Google Scholar
17.i {0002} of Ti = 12%, i {1011} of Ti = 42%, and i {0002} of Zr = 14%.Google Scholar
18. Chinaglia, E.F., Oppenheim, I.C., unpublished results.Google Scholar