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Crystallinity and Surface Morphology of Epitaxial (Sr,Ba)Nb2O6 Thin Film Prepared by Pulsed Laser Deposition with Two-Step Growth Sequence

Published online by Cambridge University Press:  10 February 2011

Osamu Nakagawara ,
Toni Shimuta ,
Katsuhiko Tanaka  and
Yuzo Katayama
Osamu Nakagawara
Affiliation:
R&D Division, Murata Manufacturing Co., Ltd, 2288 Oshinohara, Yasu, Shiga 520-2393, JAPAN, [email protected]
Toni Shimuta
Affiliation:
R&D Division, Murata Manufacturing Co., Ltd, 2288 Oshinohara, Yasu, Shiga 520-2393, JAPAN
Katsuhiko Tanaka
Affiliation:
R&D Division, Murata Manufacturing Co., Ltd, 2288 Oshinohara, Yasu, Shiga 520-2393, JAPAN
Yuzo Katayama
Affiliation:
R&D Division, Murata Manufacturing Co., Ltd, 2288 Oshinohara, Yasu, Shiga 520-2393, JAPAN
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Abstract

We have prepared epitaxially grown SBN thin film with c-axis orientation by an ArF pulsed laser deposition on SrTiO3(100). Pole figures show that the SBN film has a twin structure aligned at ±18.4: with the a-axis of SrTiO3. The epitaxial relationship of SBN<310> //SrTiO3 < 100 > is determined. The lattice mismatch between SBN and SrTiO3 is approximately 0.9%, which contributes to the desirable crystallinity of the SBN thin film. Furthermore, we have tried to form the SBN film with a two-step growth sequence in order to improve surface morphology. The amorphous initial growth region of 5 monolayers (2 nm thickness) is prepared with no substrate heating followed by post-annealing treatment at 720°C and additional growth on the initially crystallized layer. RHEED patterns of the SBN film with the two-step growth sequence have remained streaky throughout the film formation, compared with spotty patterns observed from films prepared by a conventional sequence. Atomic force microscope (AFM) images show that both the initial stage and final stage have extremely flat surfaces of rms≦ lnm which is a remarkably improved figure compared with the roughness rms ≧3nm for the film deposited at 720°C from the initial stage. These results suggest that the two-step growth sequence makes it possible to improve surface morphology to a nanometer level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 729
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Deshpande, S. B., Potdar, H. S., Godbole, P. D. and Date, S. K., J. Am. Ceram. Soc. 75, 2581 (1992).Google Scholar
2. Neurgaonkar, R. R., Santha, I. S. and Oliver, J. R., Mat. Res. Bull. 26, 983 (1991).Google Scholar
3. Nystrom, M. J., Wessels, B. W., Lin, W. P., Wong, G. K., Neumayer, D. A. and Marles, T. J., Appl. Phys. Lett. 66, 1726 (1995).Google Scholar
4. Hirano, S., Yogo, T., Kikuta, K. and Ogiso, K., J. Am. Ceram. Soc. 75, 1697(1992).Google Scholar
5. Chen, C. J., Xu, Y., Xu, R. and Mackenzie, J. D., J. Appl. Phys. 69, 1763(1991).Google Scholar
6. Thony, S. S., Youden, K. E., Harris, J. S. and Hesselink, L., Appl. Phys. Lett. 65, 2018 (1994).Google Scholar
7. Lin, W. J., Tseng, T. Y., Lin, S. P., Tu, S. L., Yang, S. J., Ham, J. J., Liu, K. S. and Lin, I. N., Jpn. J. Appl. Phys. 34, 625 (1995).Google Scholar
8. Liu, Y., Ong, C. W., Chan, P. W. and Choy, C. L., Mat. Res. Soc. Symp. Proc. 361, 557 (1995).Google Scholar
9. Cheng, H. F., Hu, C. T. and Lin, I. N., Jpn. J. Appl. Phys. 36, 284 (1997).Google Scholar
10. Nakano, M., Tabata, H., Tanaka, K., Katayama, Y. and Kawai, T., Jpn. J. Appl. Phys. 36, L1331 (1997).Google Scholar
11. Nakagawara, O., Toyota, Y., Kobayashi, M., Yoshino, Y., Katayama, Y., H. Tabata and Kawai, T., J. Appl. Phys. 80, 388 (1996).Google Scholar