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The Crystalline Quality of Epitaxial Si Layers Solution Grown on Polycrystalline Si Substrates

Published online by Cambridge University Press:  28 February 2011

M. Albrecht
Affiliation:
Universität Erlangen-Nürnberg, Institut fur Werkstoffwissenschaften, Lehrstuhl VII, -Mikrocharakterisierung-, Cauerstr. 6, D-91058 Erlangen, F.R.G.
B. Steiner
Affiliation:
Institut für Kristallzüchtung Berlin, Rudower Chaussee 6, D-12489 Berlin, F.R.G.
Th. Bergmann
Affiliation:
Universität Erlangen-Nürnberg, Institut fur Werkstoffwissenschaften, Lehrstuhl VII, -Mikrocharakterisierung-, Cauerstr. 6, D-91058 Erlangen, F.R.G.
A. Voigt
Affiliation:
Universität Erlangen-Nürnberg, Institut fur Werkstoffwissenschaften, Lehrstuhl VII, -Mikrocharakterisierung-, Cauerstr. 6, D-91058 Erlangen, F.R.G.
W. Dorsch
Affiliation:
Universität Erlangen-Nürnberg, Institut fur Werkstoffwissenschaften, Lehrstuhl VII, -Mikrocharakterisierung-, Cauerstr. 6, D-91058 Erlangen, F.R.G.
H. P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut fur Werkstoffwissenschaften, Lehrstuhl VII, -Mikrocharakterisierung-, Cauerstr. 6, D-91058 Erlangen, F.R.G.
G. Wagner
Affiliation:
Institut für Kristallzüchtung Berlin, Rudower Chaussee 6, D-12489 Berlin, F.R.G.
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Abstract

We investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We observe a reduced recombination strength of dislocations and small angle grain boundaries, i.e. an improved electrical quality of the epitaxial layer compared to the substrate. The improved quality can be attributed (i) to an altered structure of grain boundaries and dislocations and (ii) to a reduced defect density in the epitaxial layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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