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Crystalline and Electrical Properties of Ferroelectric Silver Niobate-tantalate thin Films

Published online by Cambridge University Press:  21 March 2011

Jung-Hyuk Koh ,
S.I. Khartsev ,
Alex Grishin  and
Vladimir Petrovsky
Jung-Hyuk Koh
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
S.I. Khartsev
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
Alex Grishin
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
Vladimir Petrovsky
Affiliation:
Department of Ceramic Engineering, University Missouri-Rolla, EMARC, Rolla, MO
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Abstract

For the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC11.5.1
Copyright
Copyright © Materials Research Society 2001

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