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Crystal Structure of and Defects in the Pentacene Thin Film Phase

Published online by Cambridge University Press:  11 February 2011

Lawrence F. Drummy
Affiliation:
Department of Materials Science & Engineering, University of Michigan, 2022 HH Dow Building, Ann Arbor, MI 48109–[email protected], [email protected], [email protected]
Paul K. Miska
Affiliation:
Department of Materials Science & Engineering, University of Michigan, 2022 HH Dow Building, Ann Arbor, MI 48109–[email protected], [email protected], [email protected]
David C. Martin
Affiliation:
Department of Materials Science & Engineering, University of Michigan, 2022 HH Dow Building, Ann Arbor, MI 48109–[email protected], [email protected], [email protected]
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Abstract

The aromatic hydrocarbon pentacene is currently under investigation for use as the active layer in electronic devices such as thin film field effect transistors. We have used X-Ray Diffraction (XRD), Electron Diffraction (ED), Low Voltage Electron Microscopy (LVEM), High Resolution Electron Microscopy (HREM) and molecular modeling to investigate the thin film phase of pentacene. We will report the orthorhombic symmetry and lattice parameters of the thin film phase measured experimentally from these techniques. The structure of extended defects such as dislocations and grain boundaries will influence the electrical and mechanical characteristics of the films. Here we show a direct image of an edge dislocation in the thin film phase and discuss the way in which the lattice accommodates the defect.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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