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Correlations between higher-order rings and microvoids in hydrogenated amorphous silicon

Published online by Cambridge University Press:  04 February 2015

Parthapratim Biswas  and
David Alan Drabold
Parthapratim Biswas
Affiliation:
Department of Physics and Astronomy, The University of Southern Mississippi, Hattiesburg, MS 39406, U.S.A. Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
David Alan Drabold
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
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Abstract

In this paper we report the structure of voids in several thousand atom models of hydrogenated amorphous silicon. The models are produced by jointly employing experimental information from Smets and coworkers [1] and first principles simulations [2]. We demonstrate the existence of a useful correlation between the presence of large irreducible rings and the voids in hydrogenated amorphous silicon networks. Molecular hydrogen is observed in the models, and discussed.

Keywords

amorphousSisimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1757: Symposium UU – Structure-Property Relations in Amorphous Solids , 2015 , mrsf14-1757-uu04-07
Copyright
Copyright © Materials Research Society 2015 

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References

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