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Correlation of Optical Luminescence with Radiation Hardness in Doped LiNbO3 Crystals

Published online by Cambridge University Press:  01 February 2011

William J. Thomes Jr ,
Kelly Simmons-Potter ,
Barrett G. Potter Jr  and
Louis S. Weichman
William J. Thomes Jr
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Kelly Simmons-Potter
Affiliation:
University of Arizona, Tucson, AZ 85721
Barrett G. Potter Jr
Affiliation:
University of Arizona, Tucson, AZ 85721
Louis S. Weichman
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO3 crystals for use in high gamma-field environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 851: Symposium NN – Materials for Space Applications , 2004 , NN7.3
Copyright
Copyright © Materials Research Society 2005

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