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Correlation Among Material Quality, Performance and Reliability of High Power and High Frequency AlGaN/GaN HFET

Published online by Cambridge University Press:  01 February 2011

Yasushi Nanishi
Yasushi Nanishi*
Affiliation:
[email protected], Ritsumeikan University, Department of Photonics, Kusatsu, Japan
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Abstract

Performances of AlGaN/GaN HFETs have much improved recently and very high potential of this hetero- structure for high power and high frequency electronic devices has been verified. Application of new device technologies such as field plate, recessed gate, digital pre-distortion circuit and dual field plate was essential to realize such high device performances both at 2 GHz, 5GHz and 26 GHz. However, practical requirements on the quality and structure of these material systems for production of these devices are still not clear. Extensive studies on correlation among material quality, device performance and reliability were investigated under Japanese NEDO project. Firstly, this paper reviews recent progress of the performances of high power and high frequency AlGaN/GaN HFETs. Then, several interesting results which suggest practical requirements on material quality and structure will be discussed based on our extensive characterization studies in terms of device performances and reliabilities.

Keywords

III-Vnitrideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A02-04
Copyright
Copyright © Materials Research Society 2009

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References

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